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Volumn 161, Issue 23-24, 2012, Pages 2792-2797

Alpha-sexthiophene/n - Si heterojunction diodes and solar cells investigated by I-V and C-V measurements

Author keywords

Heterojunction; Inorganic; Organic; Schottky; Solar cell

Indexed keywords

C-V MEASUREMENT; CAPACITANCE-VOLTAGE CHARACTERISTICS; CARRIER CONDUCTION; DEPLETION LAYER; DIFFUSION POTENTIAL; DIODE PARAMETERS; HETEROJUNCTION DIODES; IDEALITY FACTORS; INORGANIC; ORGANIC; ORGANIC/INORGANIC HETEROJUNCTIONS; POWER CONVERSION EFFICIENCIES; REVERSE BIAS; REVERSE CURRENTS; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SI LAYER; SILICON HETEROJUNCTIONS; SIMULATED SOLAR LIGHT; SUBMICRON SCALE; ZERO BIAS;

EID: 84855883748     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2011.10.021     Document Type: Conference Paper
Times cited : (9)

References (18)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.