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Volumn 161, Issue 23-24, 2012, Pages 2792-2797
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Alpha-sexthiophene/n - Si heterojunction diodes and solar cells investigated by I-V and C-V measurements
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Author keywords
Heterojunction; Inorganic; Organic; Schottky; Solar cell
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Indexed keywords
C-V MEASUREMENT;
CAPACITANCE-VOLTAGE CHARACTERISTICS;
CARRIER CONDUCTION;
DEPLETION LAYER;
DIFFUSION POTENTIAL;
DIODE PARAMETERS;
HETEROJUNCTION DIODES;
IDEALITY FACTORS;
INORGANIC;
ORGANIC;
ORGANIC/INORGANIC HETEROJUNCTIONS;
POWER CONVERSION EFFICIENCIES;
REVERSE BIAS;
REVERSE CURRENTS;
SCHOTTKY;
SCHOTTKY BARRIER HEIGHTS;
SI LAYER;
SILICON HETEROJUNCTIONS;
SIMULATED SOLAR LIGHT;
SUBMICRON SCALE;
ZERO BIAS;
BIAS VOLTAGE;
CONVERSION EFFICIENCY;
CURRENT VOLTAGE CHARACTERISTICS;
DIODES;
ELECTRIC RECTIFIERS;
HETEROJUNCTIONS;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR DIODES;
SILICON;
SOLAR CELLS;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 84855883748
PISSN: 03796779
EISSN: None
Source Type: Journal
DOI: 10.1016/j.synthmet.2011.10.021 Document Type: Conference Paper |
Times cited : (9)
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References (18)
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