Electrical characteristics of Au/n-GaAs Schottky barrier diodes with and without SiO2 insulator layer at room temperature

Vacuum

Volumn 83, Issue 7, 2009, Pages 1060-1065

  Altuntas H ^a   Altindal, Ş ^a   Ozcelik S ^a   Shtrikman, H ^b  

^a GAZI UNIVERSITY   (Turkey)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

Au GaAs, Au SiO2 GaAs Schottky diodes; I V and C V characteristics; Insulator layer; Interface states; Series resistance

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GOLD ALLOYS; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON COMPOUNDS; SMELTING;

AU/GAAS, AU/SIO2/GAAS SCHOTTKY DIODES; I-V AND C-V CHARACTERISTICS; INSULATOR LAYER; INTERFACE STATES; SERIES RESISTANCE;

SCHOTTKY BARRIER DIODES;

EID: 61849089337     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.01.002     Document Type: Article

References (34)

1. Lu X., Xu X., Wang N.Q., Zhang Q., and Lin M.C. J Phys Chem B 105 (2001) 10069
2. Biber M., Çakar M., and Türüt A. Solar Energy Mater 12 (2001) 575
3. Okutan M., Basaran E.N., and Yakuphanoglu F. Appl Surf Sci 252 5 (2005) 1966
4. Sztkowski J., and Sieranski K. Solid State Electron (1992) 351 013
5. Ounnoughi Z. Phys Stat Sol (a) 160 (1997) 127
6. Dökme I. Physica B 388 (2007) 10
7. Singh A., Reinhhardt K.C., and Anderson W.A. J Appl Phys 68 7 (1990) 3475
8. Card H.C., and Rhoderick E.H. J Phys D: Appl Phys 4 (1971) 1589
9. Alti{dotless}ndal S., Karadeniz S., Tuǧluoǧlu N., and Tataroǧlu A. Solid State Electron 47 (2003) 1847
10. Hudait M.K., and Kruppanidhi S.B. Solid State Electron 44 (2000) 1089
11. Çetin H., and Ayyi{dotless}ldi{dotless}z E. Appl Surf Sci 253 (2007) 5961
12. Ambrico M., Losurdo M., Capezzuto P., Bruno G., Ligonzo T., Schiavulli L., et al. Solid State Electron 494 (2005) 13
13. Alti{dotless}ndal S., Tataroglu A., and Dökme I. Solar Cells 85 (2005) 345
14. Aboelfotoh M.O. J Appl Phys 69 5 (1991) 3351
15. Castagne R., and Vapeille A. Surf Sci 28 1 (1971) 157
16. Deuling H., Klausmann E., and Goetzberger A. Solid State Electron 15 5 (1972) 559
17. Nicollian E.H., and Brews J.R. MOS physics and technology (1982), John Wiley and Sons, New York
18. Kelberlau U., and Kassing R. Solid State Electron 22 1 (1979) 37 1847
19. Tataroǧlu A., and Alti{dotless}ndal S. Microelectron Eng 85 1 (2008) 233
20. Sze S.M. Physics of semiconductor devices. 2nd ed. (1981), Wiley, New York
21. Kampen T.U., Park S., and Zahn D.R.T. Appl Surf Sci 190 (2002) 461
22. Bolognesi A., Carlo A.Di., Lugli P., Kampen T., and Zahn D.R.T. J Phys Condens Matter 152 (2003) 719
23. Rhoderick E.H., and Williams R.H. Metal-semiconductor contacts (1988), Clarendon, Oxford
24. Cheung S.K., and Cheung N.W. Appl Phys Lett 49 (1986) 85
25. Cova P., Singh A., and Masut R.A. J Appl Phys 82 (1997) 5217
26. Siad M., Keffous A., Mama S., Belkacem Y., and Menari H. Appl Surf Sci 236 (2004) 366
27. Farment S., Van Meirhaeghe R.L., Vrieze A.D., Strubbe K., and Pç Gomes W. Semicond Sci Technol 169 (2001) 75
28. Yamamoto H., Oda O., Seiwa M., Taniguchi M., Nakata H., and Ejima M. J Electrochem Soc 136 (1989) 3098
29. Alti{dotless}ndal S., Dökme I., Bülbül M.M., Yalçi{dotless}n N., and Serin T. Microelectron Eng 83 (2006) 499
30. Cova P., Singh A., Medina A., and Masut R.A. Solid State Electron 424 (1998) 77
31. Singh A. Solid State Electron 28 3 (1985) 223
32. Saglam M., Ayyi{dotless}ldi{dotless}z E., Gümüş A., Türüt A., Efeoǧlu H., and Tüzemen S. Appl Phys A 62 (1996) 269
33. Tyagi M.S. Introduction to semiconductor materials and devices (1991), Wiley, New York
34. Nicollian E.H., and Goetzberger A. Appl Phys Lett (1965) 7216