Extraction of the series resistance and interface states in Au/n-Si(111) schottky barrier diodes (SBDs) with native insulator layer using I-V-T and C-V-T measurement methods

Journal of Optoelectronics and Advanced Materials

Volumn 12, Issue 7, 2010, Pages 1472-1478

  Durmus P ^a   Altindal, S ^a   Tataroglu A ^a  

^a BOZOK UNIVERSITY   (Turkey)

Author keywords

Au n Si(111) SBDs; I V T and C V T caharacteristics; Interface states; Norde function; Series resistance

Indexed keywords

BIAS VOLTAGE; CAPACITANCE; ELECTRIC RESISTANCE; GOLD COMPOUNDS; SCHOTTKY BARRIER DIODES; SILICON; SILICON COMPOUNDS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; EFFECTIVE BARRIER HEIGHTS; ENERGY DISTRIBUTIONS; IDEALITY FACTORS; MEASUREMENT METHODS; SCHOTTKY BARRIER DIODES (SBDS); SERIES RESISTANCES; SI/SIO2 INTERFACE;

INTERFACE STATES;

EID: 77955396857     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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