Electrical characteristics of Au/Pyronine-B/moderately doped n-type InP Schottky structures in a wide temperature range

Journal of Alloys and Compounds

Volumn 509, Issue 16, 2011, Pages 5105-5111

  Soylu, M ^a   Abay, B ^b   Onganer, Y ^b  

^a University of Bingol   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Gauss distribution; InP; Pyronine B; Schottky diode

Indexed keywords

BARRIER HEIGHTS; CHARACTERISTIC PARAMETER; ELECTRICAL CHARACTERISTIC; GAUSS DISTRIBUTION; GAUSSIAN DISTRIBUTION OF THE BARRIER HEIGHT; IDEALITY FACTORS; INHOMOGENEITIES; INP; INTERFACIAL POTENTIAL; IV CHARACTERISTICS; METAL SEMICONDUCTOR INTERFACE; NON-LINEARITY; ORGANIC SEMICONDUCTOR; PYRONINE-B; RICHARDSON CONSTANT; RICHARDSON PLOT; ROOM TEMPERATURE; SCHOTTKY DIODES; SCHOTTKY STRUCTURES; TEMPERATURE DEPENDENCE OF CURRENT; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THEORETICAL VALUES; THERMIONIC EMISSION THEORY; THIN INTERLAYERS;

BEHAVIORAL RESEARCH; CURRENT VOLTAGE CHARACTERISTICS; GAUSSIAN DISTRIBUTION; SEMICONDUCTOR DIODES; THERMIONIC EMISSION;

SCHOTTKY BARRIER DIODES;

EID: 79953051128     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2011.01.183     Document Type: Article

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