-
1
-
-
0031164889
-
Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels
-
A. Luque and A. Martí, "Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels," Phys. Rev. Lett., vol. 78, pp. 5014-5017, 1997. (Pubitemid 127644729)
-
(1997)
Physical Review Letters
, vol.78
, Issue.26
, pp. 5014-5017
-
-
Luque, A.1
Marti, A.2
-
2
-
-
84858121407
-
Quantum dot intermediate band solar cell
-
A.Martí, L. Cuadra, and A. Luque, "Quantum dot intermediate band solar cell," in Proc. 28th Photovoltaic Spec. Conf., 2000, pp. 940-943.
-
(2000)
Proc. 28th Photovoltaic Spec. Conf.
, pp. 940-943
-
-
Martí, A.1
Cuadra, L.2
Luque, A.3
-
3
-
-
0000618497
-
Band anticrossing in GaIn-NAs alloys
-
W. Shan, W. Walukiewicz, J. W. Ager, III, E. E. Haller, J. F. Geisz, D. J. Friedman, J. M. Olson, and S. R. Kurtz, "Band anticrossing in GaIn-NAs alloys," Phys. Rev. Lett., vol. 82, pp. 1221-1224, 1999.
-
(1999)
Phys. Rev. Lett.
, vol.82
, pp. 1221-1224
-
-
Shan, W.1
Walukiewicz, W.2
Ager III, J.W.3
Haller, E.E.4
Geisz, J.F.5
Friedman, D.J.6
Olson, J.M.7
Kurtz, S.R.8
-
4
-
-
33744908281
-
Intermediate bands versus levels in non-radiative recombination
-
DOI 10.1016/j.physb.2006.03.006, PII S0921452606006946
-
A. Luque,A.Martí, E. Antolín, and C. Tablero, "Intermediate bands versus levels in non-radiative recombination," Physica B, Condensed Matter, vol. 382, pp. 320-327, 2006. (Pubitemid 43851245)
-
(2006)
Physica B: Condensed Matter
, vol.382
, Issue.1-2
, pp. 320-327
-
-
Luque, A.1
Marti, A.2
Antolin, E.3
Tablero, C.4
-
5
-
-
84857923174
-
Understanding intermediate-band solar cells
-
A. Luque, A. Martí, and C. Stanley, "Understanding intermediate-band solar cells," Nat. Photon., vol. 6, pp. 146-152, 2012.
-
(2012)
Nat. Photon.
, vol.6
, pp. 146-152
-
-
Luque, A.1
-
6
-
-
75749133595
-
The intermediate band solar cell: Progress toward the realization of an attractive concept
-
Jan.
-
A. Luque and A.Marti, "The intermediate band solar cell: Progress toward the realization of an attractive concept," Adv. Mater., vol. 22, pp. 160-174, Jan. 2010.
-
(2010)
Adv. Mater.
, vol.22
, pp. 160-174
-
-
Luque, A.1
Marti, A.2
-
7
-
-
84878546369
-
Six not so easy pieces in intermediate band solar cell research
-
A. Martí, E. Antolín, P. García-Linares, I. Ramiro, I. Artacho, E. López, E. Hernández, M. J. Mendes, A. Mellor, I. Tobías, D. Fuertes Marrón, C. Tablero, A. B. Cristóbal, C. G. Bailey, M. Gonzalez, M. Yakes, M. P. Lumb, R. Walters, and A. Luque, "Six not so easy pieces in intermediate band solar cell research," in Proc. SPIE OPTO, 2013, pp. 86200J-1-86200J-11.
-
(2013)
Proc. SPIE OPTO
-
-
Martí, A.1
Antolín, E.2
García-Linares, P.3
Ramiro, I.4
Artacho, I.5
López, E.6
Hernández, E.7
Mendes, M.J.8
Mellor, A.9
Tobías, I.10
Fuertes Marrón, D.11
Tablero, C.12
Cristóbal, A.B.13
Bailey C., G.14
Gonzalez, M.15
Yakes, M.16
Lumb, M.P.17
Walters, R.18
Luque, A.19
-
8
-
-
84867537050
-
Understanding experimental characterization of intermediate band solar cells
-
A.Martí, E. Antolín, P. G. Linares, and A. Luque, "Understanding experimental characterization of intermediate band solar cells," J. Mater. Chem., vol. 22, pp. 22832-22839, 2012.
-
(2012)
J. Mater. Chem.
, vol.22
, pp. 22832-22839
-
-
Martí, A.1
Antolín, E.2
Linares, P.G.3
Luque, A.4
-
9
-
-
45849108808
-
Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell
-
E. Antolín, A. Marti, C. Stanley, C. Farmer, E. Cánovas, N. López, P. Linares, and A. Luque, "Low temperature characterization of the photocurrent produced by two-photon transitions in a quantum dot intermediate band solar cell," Thin Solid Films, vol. 516, pp. 6919-6923, 2008.
-
(2008)
Thin Solid Films
, vol.516
, pp. 6919-6923
-
-
Antolín, E.1
-
10
-
-
84875620711
-
Low-Temperature concentrated light characterization applied to intermediate band solar cells
-
Apr.
-
P. G. Linares, A. Martí, E. Antolín, I. Ramiro, E. Lopez, C. D. Farmer, C. R. Stanley, and A. Luque, "Low-Temperature concentrated light characterization applied to intermediate band solar cells," IEEE J. Photovoltaics, vol. 3, no. 2, pp. 753-761, Apr. 2013.
-
(2013)
IEEE J. Photovoltaics
, vol.3
, Issue.2
, pp. 753-761
-
-
Linares, P.G.1
-
11
-
-
34548180960
-
Detailed balance limit of efficiency of p-n junction solar cells
-
W. Shockley and H. J. Queisser, "Detailed balance limit of efficiency of p-n junction solar cells," J. Appl. Phys., vol. 32, pp. 510-519, 1961.
-
(1961)
J. Appl. Phys.
, vol.32
, pp. 510-519
-
-
Shockley, W.1
Queisser, H.J.2
-
12
-
-
27944447682
-
Signature of intermediate band materials from luminescence measurements
-
Conference Record of the 31st IEEE Photovoltaic Specialists Conference - 2005
-
N. J. Ekins-Daukes, C. B. Honsberg, and M. Yamaguchi, "Signature of intermediate band materials from luminescence measurements," in Proc. Photovoltaic Spec. Conf., 2005, pp. 49-54. (Pubitemid 41667724)
-
(2005)
Conference Record of the IEEE Photovoltaic Specialists Conference
, pp. 49-54
-
-
Ekins-Daukes, N.J.1
Honsberg, C.B.2
Yamaguchi, M.3
-
13
-
-
0035471351
-
Partial filling of a quantum dot intermediate band for solar cells
-
DOI 10.1109/16.954482, PII S0018938301083617
-
A. Martí, L. Cuadra, and A. Luque, "Partial filling of a quantum dot intermediate band for solar cells," IEEE Trans. Electron Devices., vol. 48, no. 10, pp. 2394-2399, Oct. 2001. (Pubitemid 33018207)
-
(2001)
IEEE Transactions on Electron Devices
, vol.48
, Issue.10
, pp. 2394-2399
-
-
Marti, A.1
Cuadra, L.2
Luque, A.3
-
14
-
-
84878604653
-
Fundamentals of Intermediate Band Solar Cells
-
A.B. Cristóbal, A. Martí, and A. Luque, Eds. Berlin, Germany: Springer
-
A. Martí and A. Luque, "Fundamentals of Intermediate Band Solar Cells," in Next Generation of Photovoltaics: New Concepts, A.B. Cristóbal, A. Martí, and A. Luque, Eds. Berlin, Germany: Springer, 2012.
-
(2012)
Next Generation of Photovoltaics: New Concepts
-
-
Martí, A.1
Luque, A.2
-
15
-
-
67650245729
-
Photofilling of intermediate bands
-
R. Strandberg and T. W. Reenaas, "Photofilling of intermediate bands," J. Appl. Phys., vol. 105, pp. 124512-1-124512-8, 2009.
-
(2009)
J. Appl. Phys.
, vol.105
, pp. 1245121-1245128
-
-
Strandberg, R.1
Reenaas, T.W.2
-
16
-
-
45849106898
-
Elements of the design and analysis of quantum-dot intermediate band solar cells
-
A. Martí, E. Antolín, E. Cánovas, N. López, P. G. Linares, A. Luque, C. R. Stanley, and C. D. Farmer, "Elements of the design and analysis of quantum-dot intermediate band solar cells," Thin Solid Films, vol. 516, pp. 6716-6722, 2008.
-
(2008)
Thin Solid Films
, vol.516
, pp. 6716-6722
-
-
Martí, A.1
Antolín, E.2
Cánovas, E.3
López, N.4
Linares, P.G.5
Luque, A.6
Stanley, C.R.7
Farmer, C.D.8
-
17
-
-
0035278705
-
A metallic intermediate band high efficiency solar cell
-
DOI 10.1002/pip.354
-
A. Luque and A. Martí, "A metallic intermediate band high efficiency solar cell," Progress Photovoltaics, Res. Appl., vol. 9, pp. 73-86, 2001. (Pubitemid 32296936)
-
(2001)
Progress in Photovoltaics: Research and Applications
, vol.9
, Issue.2
, pp. 73-86
-
-
Luque, A.1
Martí, A.2
-
18
-
-
2942637891
-
Influence of the overlap between the absorption coefficients on the efficiency of the intermediate band solar cell
-
Jun.
-
L. Cuadra, A. Martí, and A. Luque, "Influence of the overlap between the absorption coefficients on the efficiency of the intermediate band solar cell," IEEE Trans. Electron Devices., vol. 51, no. 6, pp. 1002-1007, Jun. 2004.
-
(2004)
IEEE Trans. Electron Devices.
, vol.51
, Issue.6
, pp. 1002-1007
-
-
Cuadra, L.1
Martí, A.2
Luque, A.3
-
19
-
-
0037718603
-
Impact-ionization-assisted intermediate band solar cell
-
Feb.
-
A. Luque, A. Martí, and L. Cuadra, "Impact-ionization-assisted intermediate band solar cell," IEEE Trans. Electron Devices., vol. 50, no. 2, pp. 447-454, Feb. 2003.
-
(2003)
IEEE Trans. Electron Devices.
, vol.50
, Issue.2
, pp. 447-454
-
-
Luque, A.1
-
20
-
-
77957736868
-
Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell
-
E. Antolín, A. Martí, C. D. Farmer, P. G. Linares, E. Hernández, A. M. Śanchez, T. Ben, S. I. Molina, C. R. Stanley, and A. Luque, "Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell," J. Appl. Phys., vol. 108, pp. 064513-1-064513-7, 2010.
-
(2010)
J. Appl. Phys.
, vol.108
, pp. 0645131-0645137
-
-
Antolín, E.1
-
21
-
-
80052788866
-
Radiative thermal escape in intermediate band solar cells
-
A. Luque, A. Martí, E. Antolín, P. G. Linares, I. Tob́ýas, and I. Ramiro, "Radiative thermal escape in intermediate band solar cells," AIP Adv., vol. 1, pp. 022125-1-022125-6, 2011.
-
(2011)
AIP Adv.
, vol.1
, pp. 0221251-0221256
-
-
Luque, A.1
Martí, A.2
Antolín, E.3
Linares, P.G.4
Tob́ýas, I.5
Ramiro, I.6
-
22
-
-
33845521687
-
Production of photocurrent due to intermediate-to-conduction-band transitions: A demonstration of a key operating principle of the intermediate-band solar cell
-
A. Marti, E. Antolin, C. R. Stanley, C. D. Farmer, N. Lopez, P. Diaz, E. Canovas, P. G. Linares, and A. Luque, "Production of photocurrent due to intermediate-to-conduction-band transitions: A demonstration of a key operating principle of the intermediate-band solar cell," Phys. Rev. Lett., vol. 97, pp. 247701-1-247701-4, 2006.
-
(2006)
Phys. Rev. Lett.
, vol.97
, pp. 2477011-2477014
-
-
Marti, A.1
Antolin, E.2
Stanley, C.R.3
Farmer, C.D.4
Lopez, N.5
Diaz, P.6
Canovas, E.7
Linares, P.G.8
Luque, A.9
-
23
-
-
84865169426
-
Open-circuit voltage improvement of InAs/GaAs quantum-dot solar cells using reduced InAs coverage
-
Jul.
-
C. G. Bailey, D. V. Forbes, S. J. Polly, Z. S. Bittner, Y. Dai, C. Mackos, R. P. Raffaelle, and S. M. Hubbard, "Open-circuit voltage improvement of InAs/GaAs quantum-dot solar cells using reduced InAs coverage," IEEE J. Photovoltaics, vol. 2, no. 3, pp. 269-275, Jul. 2012.
-
(2012)
IEEE J. Photovoltaics
, vol.2
, Issue.3
, pp. 269-275
-
-
Bailey, C.G.1
Forbes, D.V.2
Polly, S.J.3
Bittner, Z.S.4
Dai, Y.5
MacKos, C.6
Raffaelle, R.P.7
Hubbard, S.M.8
-
24
-
-
0000136864
-
Solar cells
-
New York, NY, USA: Academic
-
H. J. Hovel, "Solar cells," in Semiconductors and Semimetals. vol. 11, New York, NY, USA: Academic, 1975.
-
(1975)
Semiconductors and Semimetals
, vol.11
-
-
Hovel, H.J.1
-
25
-
-
84855311075
-
Voltage recovery in intermediate band solar cells
-
P. G. Linares, A. Martí, E. Antolín, C. D. Farmer, I. Ramiro, C. R. Stanley, and A. Luque, "Voltage recovery in intermediate band solar cells," Sol. Energy Mater. Sol. Cells, vol. 98, pp. 240-244, 2011.
-
(2011)
Sol. Energy Mater. Sol. Cells
, vol.98
, pp. 240-244
-
-
Linares, P.G.1
Martí, A.2
Antolín, E.3
Farmer, C.D.4
Ramiro, I.5
Stanley, C.R.6
Luque, A.7
-
26
-
-
35148886794
-
Photon-radiative recombination of electrons and holes in germanium
-
W. Van Roosbroeck and W. Shockley, "Photon-radiative recombination of electrons and holes in germanium," Phys. Rev., vol. 94, pp. 1558-1560, 1954.
-
(1954)
Phys. Rev.
, vol.94
, pp. 1558-1560
-
-
Van Roosbroeck, W.1
Shockley, W.2
-
27
-
-
78651334835
-
Engineering the electronic band structure formultiband solar cells
-
Jan.
-
N. Lopez, L. A. Reichertz, K. M. Yu, K. Campman, andW.Walukiewicz, "Engineering the electronic band structure formultiband solar cells," Phys. Rev. Lett., vol. 106, p. 4, Jan. 2011.
-
(2011)
Phys. Rev. Lett.
, vol.106
, pp. 4
-
-
Lopez, N.1
Reichertz, L.A.2
Yu, K.M.3
Campman, K.4
Walukiewicz, W.5
-
28
-
-
84855712303
-
Application of photoluminescence and electroluminescence techniques to the characterization of intermediate band solar cells
-
I. Ramiro, E. Antolín, P. G. Linares, E. Hernández, A. Martí, A. Luque, C. D. Farmer, and C. R. Stanley, "Application of photoluminescence and electroluminescence techniques to the characterization of intermediate band solar cells," Energy Procedia, vol. 10, pp. 117-121, 2011.
-
(2011)
Energy Procedia
, vol.10
, pp. 117-121
-
-
Ramiro, I.1
Antolín, E.2
Linares, P.G.3
Hernández, E.4
Martí, A.5
Luque, A.6
Farmer, C.D.7
Stanley, C.R.8
-
29
-
-
84865625857
-
Investigation of the sub-bandgap photoresponse in CuGaS2: Fe for intermediate band solar cells
-
B. Marsen, S. Klemz, T. Unold, and H.-W. Schock, "Investigation of the sub-bandgap photoresponse in CuGaS2: Fe for intermediate band solar cells," Progress Photovoltaics, Res. Appl., vol. 20, pp. 625-629, 2012.
-
(2012)
Progress Photovoltaics, Res. Appl.
, vol.20
, pp. 625-629
-
-
Marsen, B.1
Klemz, S.2
Unold, T.3
Schock, H.-W.4
-
30
-
-
84874295618
-
Observation of an intermediate band in sn-doped chalcopyrites with wide-spectrum solar response
-
C. Yang, M. Qin, Y.Wang, D.Wan, F. Huang, and J. Lin, "Observation of an intermediate band in sn-doped chalcopyrites with wide-spectrum solar response," Sci. Rep., vol. 3, pp. 1286-1-1286-7, 2013.
-
(2013)
Sci. Rep.
, vol.3
, pp. 12861-12867
-
-
Yang, C.1
Qin, M.2
Wang, Y.3
Wan, D.4
Huang, F.5
Lin, J.6
-
31
-
-
80051981504
-
Demonstration of ZnTe1-xOx intermediate band solar cell
-
T. Tanaka, K. M. Yu, A. X. Levander, O. D. Dubon, L. A. Reichertz, N. Lopez, M. Nishio, andW.Walukiewicz, "Demonstration of ZnTe1-xOx intermediate band solar cell," Jpn. J. Appl. Phys., vol. 50, pp. 082304-1-082304-3, 2011.
-
(2011)
Jpn. J. Appl. Phys.
, vol.50
, pp. 0823041-0823043
-
-
Tanaka, T.1
Yu, K.M.2
Levander, A.X.3
Dubon, O.D.4
Reichertz, L.A.5
Lopez, N.6
Nishio, M.7
Walukiewicz, W.8
-
32
-
-
75749146616
-
Multiple levels in intermediate band solar cells
-
A. Luque, P. G. Linares, E. Antolín, E. Cánovas, C. D. Farmer, C. R. Stanley, and A. Martí, "Multiple levels in intermediate band solar cells," Appl. Phys. Lett., vol. 96, pp. 013501-1-013501-3, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 0135011-0135013
-
-
Luque, A.1
Linares, P.G.2
Antolín, E.3
Cánovas, E.4
Farmer, C.D.5
Stanley, C.R.6
Martí, A.7
-
33
-
-
51349102477
-
Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells
-
Aug.
-
R. Oshima, A. Takata, and Y. Okada, "Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells," Appl. Phys. Lett., vol. 93, pp. 083111-1-083111-3, Aug. 2008.
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 0831111-0831113
-
-
Oshima, R.1
Takata, A.2
Okada, Y.3
-
34
-
-
57149128489
-
Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In, Ga) As/Ga (As, P) quantum dot solar cells
-
V. Popescu, G. Bester,M. C. Hanna, A. G. Norman, and A. Zunger, "Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In, Ga) As/Ga (As, P) quantum dot solar cells," Phys. Rev. B, vol. 78, pp. 205321-1-205321-17, 2008.
-
(2008)
Phys. Rev. B
, vol.78
, pp. 2053211-20532117
-
-
Popescu, V.1
Bester, G.2
Hanna, M.C.3
Norman, A.G.4
Zunger, A.5
-
35
-
-
78650135958
-
Strain balanced quantum posts for intermediate band solar cells
-
D. Alonso-Alvarez, B. Aĺen, J. M. Ripalda, A. G. Taboada, J. M. Llorens, Y. Gonźalez, L. Gonźalez, F. Briones, E. Antolín, I. Ramiro, A. Martí, A. Luque, M. A. Rold́an, J. Hernandez-Saz, M. Herrera, and S. I. Molina, "Strain balanced quantum posts for intermediate band solar cells," in Proc. 35th IEEE Photovoltaic Spec. Conf., 2010, pp. 000928-000933.
-
(2010)
Proc. 35th IEEE Photovoltaic Spec. Conf.
, pp. 000928-000933
-
-
Alonso-Alvarez, D.1
Aĺen, B.2
Ripalda, J.M.3
Taboada, A.G.4
Llorens, J.M.5
Gonźalez, Y.6
Gonźalez, L.7
Briones, F.8
Antolín, E.9
Ramiro, I.10
Martí, A.11
Luque, A.12
Rold́an, M.A.13
Hernandez-Saz, J.14
Herrera, M.15
Molina, S.I.16
-
36
-
-
37149043490
-
Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers
-
R. Laghumavarapu, M. El-Emawy, N. Nuntawong, A. Moscho, L. Lester, and D. Huffaker, "Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers," Appl. Phys. Lett., vol. 91, pp. 243115-1-243115-3, 2007.
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 2431151-2431153
-
-
Laghumavarapu, R.1
El-Emawy, M.2
Nuntawong, N.3
Moscho, A.4
Lester, L.5
Huffaker, D.6
-
37
-
-
84863517238
-
Improving the characteristics of intermediate-band solar cell devices using a vertically aligned InAs/GaAsSb quantum dot structure
-
W.-S. Liu, H.-M.Wu, F.-H. Tsao, T.-L. Hsu, and J.-I. Chyi, "Improving the characteristics of intermediate-band solar cell devices using a vertically aligned InAs/GaAsSb quantum dot structure," Sol. Energy Mater. Sol. Cells, vol. 105, pp. 237-241, 2012.
-
(2012)
Sol. Energy Mater. Sol. Cells
, vol.105
, pp. 237-241
-
-
Liu, W.-S.1
Wu, H.-M.2
Tsao, F.-H.3
Hsu, T.-L.4
Chyi, J.-I.5
-
38
-
-
65549149667
-
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs
-
S. A. Blokhin, A. V. Sakharov, A. M. Nadtochy, A. S. Pauysov, M. V. Maximov, N. N. Ledentsov, A. R. Kovsh, S. S. Mikhrin, V. M. Lantratov, and S. A. Mintairov, "AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs," Semiconductors, vol. 43, pp. 514-518, 2009.
-
(2009)
Semiconductors
, vol.43
, pp. 514-518
-
-
Blokhin, S.A.1
Sakharov, A.V.2
Nadtochy, A.M.3
Pauysov, A.S.4
Maximov, M.V.5
Ledentsov, N.N.6
Kovsh, A.R.7
Mikhrin, S.S.8
Lantratov, V.M.9
Mintairov, S.A.10
-
39
-
-
3142738319
-
General equivalent circuit for intermediate band devices: Potentils, currents and eleactroluminescence
-
A. Luque, A. Martí, C. Stanley, N. López, L. Cuadra, D. Zhou, J. L. Pearson, and A. McKee, "General equivalent circuit for intermediate band devices: Potentils, currents and eleactroluminescence," J. Appl. Phys., vol. 96, pp. 903-909, 2004.
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 903-909
-
-
Luque, A.1
Martí, A.2
Stanley, C.3
López, N.4
Cuadra, L.5
Zhou, D.6
Pearson, J.L.7
McKee, A.8
-
40
-
-
79958794163
-
Strong enhancement of solar cell efficiency due to quantum dots with built-in charge
-
K. A. Sablon, J. W. Little, V. Mitin, A. Sergeev, N. Vagidov, and K. Reinhardt, "Strong enhancement of solar cell efficiency due to quantum dots with built-in charge," Nano Lett., vol. 11, pp. 2311-2317, 2011.
-
(2011)
Nano Lett.
, vol.11
, pp. 2311-2317
-
-
Sablon, K.A.1
Little, J.W.2
Mitin, V.3
Sergeev, A.4
Vagidov, N.5
Reinhardt, K.6
-
41
-
-
76749155571
-
Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy
-
D. Zhou, G. Sharma, S. Thomassen, T. Reenaas, and B. Fimland, "Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy," Appl. Phys. Lett., vol. 96, pp. 061913-1-061913-3, 2010.
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 0619131-0619133
-
-
Zhou, D.1
Sharma, G.2
Thomassen, S.3
Reenaas, T.4
Fimland, B.5
-
42
-
-
84863275059
-
Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer
-
F. K. Tutu, I. R. Sellers, M. G. Peinado, C. E. Pastore, S. M. Willis, A. R. Watt, T. Wang, and H. Y. Liu, "Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer," J. Appl. Phys., vol. 111, pp. 046101-1-046101-3, 2012.
-
(2012)
J. Appl. Phys.
, vol.111
, pp. 0461011-0461013
-
-
Tutu, F.K.1
Sellers, I.R.2
Peinado, M.G.3
Pastore, C.E.4
Willis, S.M.5
Watt, A.R.6
Wang, T.7
Liu, H.Y.8
-
43
-
-
34248531680
-
GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response
-
R. Laghumavarapu, A. Moscho, A. Khoshakhlagh, M. El-Emawy, L. Lester, and D. Huffaker, "GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response," Appl. Phys. Lett., vol. 90, pp. 173125-1-173125-3, 2007.
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 1731251-1731253
-
-
Laghumavarapu, R.1
Moscho, A.2
Khoshakhlagh, A.3
El-Emawy, M.4
Lester, L.5
Huffaker, D.6
-
44
-
-
37549056538
-
Optical investigation of type II GaSb/GaAs self-assembled quantum dots
-
D. Alonso-Álvarez, B. Alén, J. M. García, and J. M. Ripalda, "Optical investigation of type II GaSb/GaAs self-assembled quantum dots," Appl. Phys. Lett., vol. 91, pp. 263103-1-263103-3, 2007.
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 2631031-2631033
-
-
Alonso-Álvarez, D.1
Alén, B.2
García, J.M.3
Ripalda, J.M.4
-
45
-
-
84859158266
-
Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells
-
P. J. Carrington, A. S. Mahajumi,M. C.Wagener, J. R. Botha, Q. Zhuang, and A. Krier, "Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells," Physica B, Condensed Matter, vol. 407, pp. 1493-1496, 2012.
-
(2012)
Physica B, Condensed Matter
, vol.407
, pp. 1493-1496
-
-
Carrington, P.J.1
Mahajumim, A.S.2
Wagener, M.C.3
Botha, J.R.4
Zhuang, Q.5
Krier, A.6
-
46
-
-
84869398331
-
InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps
-
I. Ramiro, E. Antolin,M. J. Steer, P. G. Linares, E. Hernandez, I. Artacho, E. Lopez, T. Ben, J. M. Ripalda, and S. I.Molina, "InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps," in Proc. 38th Photovoltaic Spec. Conf., 2012, pp. 000652-000656.
-
(2012)
Proc. 38th Photovoltaic Spec. Conf.
, pp. 000652-000656
-
-
Ramiro, I.1
Antolin, E.2
Steer, M.J.3
Linares, P.G.4
Hernandez, E.5
Artacho, I.6
Lopez, E.7
Ben, T.8
Ripalda, J.M.9
Molina, S.I.10
-
47
-
-
84857438886
-
AlGaInAs quantum dot solar cells: Tailoring quantum dots for intermediate band formation
-
C. Schneider, S. Kremling, N. Tarakina, T. Braun, M. Adams, M. Lermer, S. Reitzenstein, L. Worschech, M. Kamp, and S. Höfling, "AlGaInAs quantum dot solar cells: tailoring quantum dots for intermediate band formation," Semicond. Sci. Technol., vol. 27, pp. 032002-1-032002-5, 2012.
-
(2012)
Semicond. Sci. Technol.
, vol.27
, pp. 0320021-0320025
-
-
Schneider, C.1
Kremling, S.2
Tarakina, N.3
Braun, T.4
Adams, M.5
Lermer, M.6
Reitzenstein, S.7
Worschech, L.8
Kamp, M.9
Höfling, S.10
-
48
-
-
84874782248
-
Evidence of two-photon absorption in strain-free quantum dot GaAs/AlGaAs solar cells
-
A. Scaccabarozzi, S. Adorno, S. Bietti, M. Acciarri, and S. Sanguinetti, "Evidence of two-photon absorption in strain-free quantum dot GaAs/AlGaAs solar cells," Physica Status Solidi (RRL)-Rapid Res. Lett., vol. 7, pp. 173-176, 2013.
-
(2013)
Physica Status Solidi (RRL)-Rapid Res. Lett.
, vol.7
, pp. 173-176
-
-
Scaccabarozzi, A.1
Adorno, S.2
Bietti, S.3
Acciarri, M.4
Sanguinetti, S.5
-
49
-
-
84864495278
-
Strain-free ring-shaped nanostructures by droplet epitaxy for photovoltaic application
-
J.Wu, Z. M.Wang,V. G. Dorogan, S. Li, Z. Zhou, H. Li, J. Lee, E. S. Kim, Y. I. Mazur, and G. J. Salamo, "Strain-free ring-shaped nanostructures by droplet epitaxy for photovoltaic application," Appl. Phys. Lett., vol. 101, pp. 043904-1-043904-4, 2012.
-
(2012)
Appl. Phys. Lett.
, vol.101
, pp. 0439041-0439044
-
-
Wu, J.1
Wang, Z.M.2
Dorogan, V.G.3
Li, S.4
Zhou, Z.5
Li, H.6
Lee, J.7
Kim, E.S.8
Mazur, Y.I.9
Salamo, G.J.10
-
50
-
-
27944481698
-
InGaAs/GaAs QD superlattices: Movpe growth, structural and optical characterization, and application in intermediate-band solar cells
-
Conference Record of the 31st IEEE Photovoltaic Specialists Conference - 2005
-
A. G. Norman, M. Hanna, P.Dippo, D. Levi, R.Reedy, J.Ward, and M. Al-Jassim, "InGaAs/GaAs QD superlattices: MOVPE growth, structural and optical characterization, and application in intermediate-band solar cells," in Proc. 31st IEEE Photovoltaic Spec., 2005, pp. 43-48. (Pubitemid 41667723)
-
(2005)
Conference Record of the IEEE Photovoltaic Specialists Conference
, pp. 43-48
-
-
Norman, A.G.1
Hanna, M.C.2
Dippo, P.3
Levi, D.H.4
Reedy, R.C.5
Ward, J.S.6
Al-Jassim, M.M.7
-
51
-
-
84857518602
-
Ultra-high stacks of InGaAs/GaAs quantum dots for high efficiency solar cells
-
T. Sugaya, O. Numakami, R. Oshima, S. Furue, H. Komaki, T. Amano, K. Matsubara, Y. Okano, and S. Niki, "Ultra-high stacks of InGaAs/GaAs quantum dots for high efficiency solar cells," Energy Environ. Sci., vol. 5, pp. 6233-6237, 2012.
-
(2012)
Energy Environ. Sci.
, vol.5
, pp. 6233-6237
-
-
Sugaya, T.1
Numakami, O.2
Oshima, R.3
Furue, S.4
Komaki, H.5
Amano, T.6
Matsubara, K.7
Okano, Y.8
Niki, S.9
-
52
-
-
79551660696
-
Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
-
Y. Okada, T. Morioka, K. Yoshida, R. Oshima, Y. Shoji, T. Inoue, and T. Kita, "Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell," J. Appl. Phys., vol. 109, pp. 024301-1-024301-5, 2011.
-
(2011)
J. Appl. Phys.
, vol.109
, pp. 0243011-0243015
-
-
Okada, Y.1
Morioka, T.2
Yoshida, K.3
Oshima, R.4
Shoji, Y.5
Inoue, T.6
Kita, T.7
-
53
-
-
17144459927
-
Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots
-
DOI 10.1103/PhysRevB.62.16784
-
P. W. Fry, I. E. Itskevich, S. R. Parnell, J. J. Finley, L. R. Wilson, K. L. Schumacher, D. J. Mowbray, M. S. Skolnick, M. Al-Khafaji, and A. G. Cullis, "Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots," Phys. Rev. B, vol. 62, pp. 16784-16791, 2000. (Pubitemid 32372772)
-
(2000)
Physical Review B - Condensed Matter and Materials Physics
, vol.62
, Issue.24
, pp. 16784-16791
-
-
Fry, P.W.1
Itskevich, I.E.2
Parnell, S.R.3
Finley, J.J.4
Wilson, L.R.5
Schumacher, K.L.6
Mowbray, D.J.7
Skolnick, M.S.8
Al-Khafaji, M.9
Cullis, A.G.10
Hopkinson, M.11
Clark, J.C.12
Hill, G.13
-
54
-
-
0034664488
-
Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots
-
DOI 10.1103/PhysRevB.62.6959
-
W. H. Chang, T. M. Hsu, C. C. Huang, S. L. Hsu, C. Y. Lai, N. T. Yeh, T. E. Nee, and J. I. Chyi, "Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots," Phys. Rev. B, vol. 62, pp. 6959-6962, 2000. (Pubitemid 32323585)
-
(2000)
Physical Review B - Condensed Matter and Materials Physics
, vol.62
, Issue.11
, pp. 6959-6962
-
-
Chang, W.-H.1
Hsu, T.M.2
Huang, C.C.3
Hsu, S.L.4
Lai, C.Y.5
Yeh, N.T.6
Nee, T.E.7
Chyi, J.-I.8
-
55
-
-
22244489704
-
Characteristics of InGaAs quantum dot infrared photodetectors
-
S. J. Xu, S. J. Chua, T. Mei, X. C. Wang, X. H. Zhang, G. Karunasiri, W. J. Fan, C. H. Wang, J. Jiang, and S. Wang, "Characteristics of InGaAs quantum dot infrared photodetectors," Appl. Phys. Lett., vol. 73, p. 3153, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 3153
-
-
Xu, S.J.1
Chua, S.J.2
Mei, T.3
Wang, X.C.4
Zhang, X.H.5
Karunasiri, G.6
Fan, W.J.7
Wang, C.H.8
Jiang, J.9
Wang, S.10
-
56
-
-
0035871119
-
1-xAs quantum dot infrared photodetectors with undoped active region
-
DOI 10.1063/1.1356430
-
Z. Chen, O. Baklenov, E. Kim, I. Mukhametzhanov, J. Tie, A. Madhukar, Z. Ye, and J. Campbell, "Normal incidence InAs/AlGaAs quantum dot infrared photodetectors with undoped active region," J. Appl. Phys., vol. 89, pp. 4558-4563, 2001. (Pubitemid 33662327)
-
(2001)
Journal of Applied Physics
, vol.89
, Issue.8
, pp. 4558-4563
-
-
Chen, Z.1
Baklenov, O.2
Kim, E.T.3
Mukhametzhanov, I.4
Tie, J.5
Madhukar, A.6
Ye, Z.7
Campbell, J.C.8
-
57
-
-
1342268719
-
An In0. 6Ga0. 4As/GaAs quantum dot infrared photodetector with operating temperature up to 260 K
-
L. Jiang, S. S. Li, N.-T. Yeh, and J.-I. Chyi, "An In0. 6Ga0. 4As/GaAs quantum dot infrared photodetector with operating temperature up to 260 K," in Proc. AeroSense, 2003, pp. 677-684.
-
(2003)
Proc. AeroSense
, pp. 677-684
-
-
Jiang, L.1
Li, S.S.2
Yeh, N.-T.3
Chyi, J.-I.4
-
58
-
-
34250766169
-
Emitter degradation in quantum dot intermediate band solar cells
-
A. Martí, N. Lopez, E. Antolín, E. Canovas, A. Luque, C. R. Stanley, C. D. Farmer, and P. Díaz, "Emitter degradation in quantum dot intermediate band solar cells," Appl. Phys. Lett., vol. 90, pp. 233510-1-233510-3, 2007.
-
(2007)
Appl. Phys. Lett.
, vol.90
, pp. 2335101-2335103
-
-
Martí, A.1
Lopez, N.2
Antolín, E.3
Canovas, E.4
Luque, A.5
Stanley, C.R.6
Farmer, C.D.7
Díaz, P.8
-
59
-
-
84855321124
-
Solar cell efficiency tables (ver. 39)
-
M. A. Green,K. Emery,Y.Hishikawa,W.Warta, and E. D.Dunlop, "Solar cell efficiency tables (ver. 39)," Progress Photovoltaics, Res. Appl., vol. 20, pp. 12-20, 2011.
-
(2011)
Progress Photovoltaics, Res. Appl.
, vol.20
, pp. 12-20
-
-
Green, M.A.1
Emery, K.2
Hishikawa, Y.3
Warta, W.4
Dunlop, E.D.5
-
60
-
-
78650091494
-
Advances in Quantum dot intermediate band solar cells
-
E. Antolín, A.Martí, P. G. Linares, I. Ramiro, E.Hernández, C. D. Farmer, C. R. Stanley, andA. Luque, "Advances in Quantum dot intermediate band solar cells," in Proc. 35th Photovoltaic Spec. Conf., 2010, pp. 00065-00070.
-
(2010)
Proc. 35th Photovoltaic Spec. Conf.
, pp. 00065-00070
-
-
Antolín, E.1
Martí, A.2
Linares, P.G.3
Ramiro, I.4
Hernández, E.5
Farmer, C.D.6
Stanley, C.R.7
Luque, A.8
-
61
-
-
24344445881
-
Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells
-
A. Luque, A. Marti, N. Lopez, E. Antolin, E. Canovas, C. Stanley, C. Farmer, L. J. Caballero, L. Cuadra, and J. L. Balenzategui, "Experimental analysis of the quasi-Fermi level split in quantum dot intermediate-band solar cells," Appl. Phys. Lett., vol. 87, pp. 083505-1-083505-3, 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 0835051-0835053
-
-
Luque, A.1
Marti, A.2
Lopez, N.3
Antolin, E.4
Canovas, E.5
Stanley, C.6
Farmer, C.7
Caballero, L.J.8
Cuadra, L.9
Balenzategui, J.L.10
-
62
-
-
84872864606
-
On the reported experimental evidence for the quasi-Fermi level split in quantum-dot intermediate-band solar cells
-
A. A. Abouelsaood, M. Y. Ghannam, and J. Poortmans, "On the reported experimental evidence for the quasi-Fermi level split in quantum-dot intermediate-band solar cells," Progress Photovoltaics, Res. Appl., 2011.
-
(2011)
Progress Photovoltaics, Res. Appl.
-
-
Abouelsaood, A.A.1
Ghannam, M.Y.2
Poortmans, J.3
-
63
-
-
0000772750
-
Intraband absorption in n-doped InAs/GaAs quantum dots
-
S. Sauvage, P. Boucaud, F. Julien, J.-M. Ǵerard, and V. Thierry-Mieg, "Intraband absorption in n-doped InAs/GaAs quantum dots," Appl. Phys. Lett., vol. 71, pp. 2785-2787, 1997. (Pubitemid 127625601)
-
(1997)
Applied Physics Letters
, vol.71
, Issue.19
, pp. 2785-2787
-
-
Sauvage, S.1
Boucaud, P.2
Julien, F.H.3
Gerard, J.-M.4
Thierry-Mieg, V.5
-
64
-
-
0031244727
-
Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots
-
J. Phillips, K. Kamath,X. Zhou, N. Chervela, and P. Bhattacharya, "Photoluminescence and far-infrared absorption in Si-doped self-organized InAs quantum dots," Appl. Phys. Lett., vol. 71, pp. 2079-2081, 1997. (Pubitemid 127611319)
-
(1997)
Applied Physics Letters
, vol.71
, Issue.15
, pp. 2079-2081
-
-
Phillips, J.1
Kamath, K.2
Zhou, X.3
Chervela, N.4
Bhattacharya, P.5
-
65
-
-
0347569915
-
Interband absorption on self-assembled InAs quantum dots
-
PII S1386947798000058
-
C. D̈urr, R. Warburton, K. Karrai, J. Kotthaus, G. Medeiros-Ribeiro, and P. Petroff, "Interband absorption on self-assembled InAs quantum dots," Physica E: Low-dimensional Syst. Nanostruct., vol. 2, pp. 23-27, 1998. (Pubitemid 128411265)
-
(1998)
Physica E: Low-Dimensional Systems and Nanostructures
, vol.2
, Issue.1-4
, pp. 23-27
-
-
Durr, C.S.1
Warburton, R.J.2
Karrai, K.3
Kotthaus, J.P.4
Medeiros-Ribeiro, G.5
Petroff, P.M.6
-
66
-
-
69249192722
-
Intermediate-band material based on GaAs quantum rings for solar cells
-
J. Wu, D. Shao, Z. Li, M. O. Manasreh, V. P. Kunets, Z. M. Wang, and G. J. Salamo, "Intermediate-band material based on GaAs quantum rings for solar cells," Appl. Phys. Lett., vol. 95, pp. 071908-1-071908-3, 2009.
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 0719081-0719083
-
-
Wu, J.1
Shao, D.2
Li, Z.3
Manasreh, M.O.4
Kunets, V.P.5
Wang, Z.M.6
Salamo, G.J.7
-
67
-
-
0029346702
-
Visible luminescence from semiconductor quantum dots in large ensembles
-
R. Leon, S. Fafard, D. Leonard, J. Merz, and P. Petroff, "Visible luminescence from semiconductor quantum dots in large ensembles," Appl. Phys. Lett., vol. 67, pp. 521-523, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 521-523
-
-
Leon, R.1
Fafard, S.2
Leonard, D.3
Merz, J.4
Petroff, P.5
-
68
-
-
0032476435
-
Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots
-
DOI 10.1063/1.122544, PII S0003695198007438
-
B. Sun, Z. Lu, D. Jiang, J.Wu, Z. Xu, Y.Wang, J.Wang, andW. Ge, "Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots," Appl. Phys. Lett., vol. 73, pp. 2657-2659, 1998. (Pubitemid 128674028)
-
(1998)
Applied Physics Letters
, vol.73
, Issue.18
, pp. 2657-2659
-
-
Sun, B.Q.1
Lu, Z.D.2
Jiang, D.S.3
Wu, J.Q.4
Xu, Z.Y.5
Wang, Y.Q.6
Wang, J.N.7
Ge, W.K.8
-
69
-
-
0038518324
-
Structural and optical properties of InAs quantum dots in AlGaAs matrix
-
DOI 10.1134/1.1575361
-
D. Sizov, Y. B. Samsonenko, G. Tsyrlin, N. Polyakov, V. Egorov, A. Tonkikh, A. Zhukov, S. Mikhrin, A. Vasil'ev, and Y. G. Musikhin, "Structural and optical properties of InAs quantum dots in AlGaAs matrix," Semiconductors, vol. 37, pp. 559-563, 2003. (Pubitemid 36630251)
-
(2003)
Semiconductors
, vol.37
, Issue.5
, pp. 559-563
-
-
Sizov, D.S.1
Samsonenko, Yu.B.2
Tsyrlin, G.E.3
Polyakov, N.K.4
Egorov, V.A.5
Tonkikh, A.A.6
Zhukov, A.E.7
Mikhrin, S.S.8
Vasil'ev, A.P.9
Musikhin, Yu.G.10
Tsatsul'nikov, A.F.11
Ustinov, V.M.12
Ledentsov, N.N.13
-
70
-
-
4243721603
-
Photoluminescence from a single GaAs/AlGaAs quantum dot
-
K. Brunner, U. Bockelmann, G. Abstreiter, M. Walther, G. B̈ohm, G. Tr̈ankle, and G. Weimann, "Photoluminescence from a single GaAs/AlGaAs quantum dot," Phys. Rev. Lett., vol. 69, pp. 3216-3219, 1992.
-
(1992)
Phys. Rev. Lett.
, vol.69
, pp. 3216-3219
-
-
Brunner, K.1
Bockelmann, U.2
Abstreiter, G.3
Walther, M.4
B̈ohm, G.5
Tr̈ankle, G.6
Weimann, G.7
-
71
-
-
33751075187
-
Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots
-
J. Tatebayashi, A. Khoshakhlagh, S. Huang, L. Dawson, G. Balakrishnan, and D. Huffaker, "Formation and optical characteristics of strain-relieved and densely stacked GaSb/GaAs quantum dots," Appl. Phys. Lett., vol. 89, pp. 203116-1-203116-3, 2006.
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 2031161-2031163
-
-
Tatebayashi, J.1
Khoshakhlagh, A.2
Huang, S.3
Dawson, L.4
Balakrishnan, G.5
Huffaker, D.6
-
72
-
-
0037693812
-
450 meV hole localization in GaSb/GaAs quantum dots
-
M. Geller, C. Kapteyn, L. Muller-Kirsch, R. Heitz, and D. Bimberg, "450 meV hole localization in GaSb/GaAs quantum dots," Appl. Phys. Lett., vol. 82, pp. 2706-2708, 2003.
-
(2003)
Appl. Phys. Lett.
, vol.82
, pp. 2706-2708
-
-
Geller, M.1
Kapteyn, C.2
Muller-Kirsch, L.3
Heitz, R.4
Bimberg, D.5
-
73
-
-
0001337775
-
Manipulating the energy levels of semiconductor quantum dots
-
S. Fafard, Z. R. Wasilewski, C. N. Allen, D. Picard, M. Spanner, J. P. McCaffrey, and P. G. Piva, "Manipulating the energy levels of semiconductor quantum dots," Phys. Rev. B, vol. 59, pp. 15368-15373, 1999.
-
(1999)
Phys. Rev. B
, vol.59
, pp. 15368-15373
-
-
Fafard, S.1
Wasilewski, Z.R.2
Allen, C.N.3
Picard, D.4
Spanner, M.5
McCaffrey, J.P.6
Piva, P.G.7
-
74
-
-
45849088848
-
Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells
-
E. Cánovas, A. Martí, N. López, E. Antolín, P. Linares, C. Farmer, C. Stanley, and A. Luque, "Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells," Thin Solid Films, vol. 516, pp. 6943-6947, 2008.
-
(2008)
Thin Solid Films
, vol.516
, pp. 6943-6947
-
-
Cánovas, E.1
-
75
-
-
84895925045
-
Application of photoreflectance to advanced multilayer structures for photovoltaics
-
D. F. Marrón, E. Cánovas, I. Artacho, C. Stanley, M. Steer, T. Kaizu, Y. Shoji, N. Ahsan, Y. Okada, and E. Barriǵon, "Application of photoreflectance to advanced multilayer structures for photovoltaics," Mater. Sci. Eng., B, 2012.
-
(2012)
Mater. Sci. Eng., B
-
-
Marrón, D.F.1
Cánovas, E.2
Artacho, I.3
Stanley, C.4
Steer, M.5
Kaizu, T.6
Shoji, Y.7
Ahsan, N.8
Okada, Y.9
Barriǵon, E.10
-
76
-
-
84860320210
-
Two-photon excitation in an intermediate band solar cell structure
-
N. Ahsan, N. Miyashita, M. Monirul Islam, K. Man Yu, W. Walukiewicz, and Y. Okada, "Two-photon excitation in an intermediate band solar cell structure," Appl. Phys. Lett., vol. 100, pp. 172111-1-172111-4, 2012.
-
(2012)
Appl. Phys. Lett.
, vol.100
, pp. 1721111-1721114
-
-
Ahsan, N.1
Miyashita, N.2
Monirul Islam, M.3
Man Yu, K.4
Walukiewicz, W.5
Okada, Y.6
-
77
-
-
84875625096
-
Effect of Sb on GaNAs intermediate band solar cells
-
Apr.
-
N. Ahsan, N. Miyashita, M. M. Islam, K. M. Yu, W. Walukiewicz, and Y. Okada, "Effect of Sb on GaNAs intermediate band solar cells," IEEE J. Photovoltaics, vol. 3, no. 2, pp. 730-736, Apr. 2013.
-
(2013)
IEEE J. Photovoltaics
, vol.3
, Issue.2
, pp. 730-736
-
-
Ahsan, N.1
Miyashita, N.2
Islam, M.M.3
Yu, K.M.4
Walukiewicz, W.5
Okada, Y.6
-
78
-
-
84874049452
-
Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells
-
T. Tanaka,M.Miyabara, Y. Nagao, K. Saito, Q. Guo, M. Nishio, K. M. Yu, and W. Walukiewicz, "Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells," Appl. Phys. Lett., vol. 102, pp. 052111-1-052111-4, 2013.
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 0521111-0521114
-
-
Tanaka, T.1
Miyabara, M.2
Nagao, Y.3
Saito, K.4
Guo, Q.5
Nishio, M.6
Yu, K.M.7
Walukiewicz, W.8
-
79
-
-
67650501838
-
Intermediate-band photovoltaic solar cell based on ZnTe: O
-
W. Wang, A. S. Lin, and J. D. Phillips, "Intermediate-band photovoltaic solar cell based on ZnTe: O," Appl. Phys. Lett., vol. 95, pp. 011103-1-011103-3, 2009.
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 0111031-0111033
-
-
Wang, W.1
Lin, A.S.2
Phillips, J.D.3
-
80
-
-
84891075429
-
Intermediate band to conduction band optical absorption in ZnTeO
-
E. Antolín, I. Ramiro, E. López, E. Hernández, I. Artacho, C. Tablero, A. Martí, A. Luque, J. Chen, J. Foley, and J. D. Phillips, "Intermediate band to conduction band optical absorption in ZnTeO," in Proc. 38th Photovoltaic Spec. Conf., 2012, pp. 1-5.
-
(2012)
Proc. 38th Photovoltaic Spec. Conf.
, pp. 1-5
-
-
Antolín, E.1
-
81
-
-
84875706559
-
GaNAsP: An intermediate band semiconductor grown by gassource molecular beam epitaxy
-
Y. Kuang, K. Yu, R. Kudrawiec, A. Luce, M. Ting, W. Walukiewicz, and C. Tu, "GaNAsP: An intermediate band semiconductor grown by gassource molecular beam epitaxy," Appl. Phys. Lett., vol. 102, pp. 112105-1-112105-4, 2013.
-
(2013)
Appl. Phys. Lett.
, vol.102
, pp. 1121051-1121054
-
-
Kuang, Y.1
Yu, K.2
Kudrawiec, R.3
Luce, A.4
Ting, M.5
Walukiewicz, W.6
Tu, C.7
-
82
-
-
33644667581
-
Multiband GaNAsP quaternary alloys
-
K. Yu, W. Walukiewicz, J. Ager, D. Bour, R. Farshchi, O. Dubon, S. Li, I. Sharp, and E. Haller, "Multiband GaNAsP quaternary alloys," Appl. Phys. Lett., vol. 88, pp. 092110-1-092110-3, 2006.
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 0921101-0921103
-
-
Yu, K.1
Walukiewicz, W.2
Ager, J.3
Bour, D.4
Farshchi, R.5
Dubon, O.6
Li, S.7
Sharp, I.8
Haller, E.9
-
83
-
-
84867606657
-
Extreme voltage recovery in GaAs: Ti intermediate band solar cells
-
P. G. Linares, A. Martí, E. Antolín, I. Ramiro, E. López, E. Hernández, D. Fuertes Marrón, I. Artacho, I. Tobías, P. Ǵerard, C. Chaix, R. P. Campion, C. T. Foxon, C. R. Stanley, S. I. Molina, and A. Luque, "Extreme voltage recovery in GaAs: Ti intermediate band solar cells," Sol. Energy Mater. Sol. Cells, vol. 108, pp. 175-179, 2013.
-
(2013)
Sol. Energy Mater. Sol. Cells
, vol.108
, pp. 175-179
-
-
Linares, P.G.1
-
84
-
-
84874527220
-
Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy
-
J.-K. Sheu, F.-W. Huang, Y.-H. Liu, P. Chen, Y.-H. Yeh, M.-L. Lee, and W.-C. Lai, "Photoresponses of manganese-doped gallium nitride grown by metalorganic vapor-phase epitaxy," Appl.Phys. Lett., vol. 102, pp. 071107-1-071107-3, 2013.
-
(2013)
Appl.Phys. Lett.
, vol.102
, pp. 0711071-0711073
-
-
Sheu, J.-K.1
Huang, F.-W.2
Liu, Y.-H.3
Chen, P.4
Yeh, Y.-H.5
Lee, M.-L.6
Lai, W.-C.7
-
85
-
-
77955415322
-
Effects of Ti-incorporation in CuInS2 solar cells
-
B. Marsen, L. Steinkopf, A. Singh, H. Wilhelm, I. Lauermann, T. Unold, R. Scheer, and H. W. Schock, "Effects of Ti-incorporation in CuInS2 solar cells," Sol. Energy Mater. Sol. Cells, vol. 94, pp. 1730-1733, 2010.
-
(2010)
Sol. Energy Mater. Sol. Cells
, vol.94
, pp. 1730-1733
-
-
Marsen, B.1
Steinkopf, L.2
Singh, A.3
Wilhelm, H.4
Lauermann, I.5
Unold, T.6
Scheer, R.7
Schock, H.W.8
-
86
-
-
84861805071
-
Partially filled intermediate band of Cr-doped GaN films
-
S. Sonoda, "Partially filled intermediate band of Cr-doped GaN films," Appl. Phys. Lett., vol. 100, pp. 202101-1-202101-4, 2012.
-
(2012)
Appl. Phys. Lett.
, vol.100
, pp. 2021011-2021014
-
-
Sonoda, S.1
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