Elements of the design and analysis of quantum-dot intermediate band solar cells

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6716-6722

  Marti A ^a   Antolin E ^a   Canovas E ^a   Lopez N ^a   Linares, P G ^a   Luque, A ^a   Stanley, C R ^b   Farmer, C D ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Circuit model; Efficiency; GaAs; InAs; Intermediate band; Novel concepts; Photovoltaics; Quantum dots; Solar cells; Solar concentration

Indexed keywords

CIRCUIT SIMULATION; EFFICIENCY; ENERGY GAP; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; LIGHT; NANOCRYSTALS; OPEN CIRCUIT VOLTAGE; SOLAR CELLS; SOLAR POWER GENERATION;

CIRCUIT MODELING; GAAS; INAS; INTERMEDIATE BANDS; NOVEL CONCEPT; PHOTOVOLTAICS; SOLAR CONCENTRATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 45849106898     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.064     Document Type: Article

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