Advances in quantum dot intermediate band solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 65-70

  Antolin E ^a   Marti A ^a   Linares, P G ^a   Ramiro, I ^a   Hernandez E ^a   Farmer, C D ^b   Stanley, C R ^b   Luque, A ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOCRYSTALS; OPEN CIRCUIT VOLTAGE; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS;

CARRIER ESCAPES; INAS/GAAS QUANTUM DOTS; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; LOW TEMPERATURES; OUTPUT VOLTAGES; THEORETICAL MODELING; TUNNELING MECHANISM;

QUANTUM EFFICIENCY;

EID: 78650091494     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614224     Document Type: Conference Paper

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