Partially filled intermediate band of Cr-doped GaN films

Applied Physics Letters

Volumn 100, Issue 20, 2012, Pages

  Sonoda, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CR-DOPED GAN; CR-DOPED GAN FILMS; CR-DOPING; INTERMEDIATE BANDS; INTERMEDIATE-BAND SOLAR CELLS; PHOTOELECTRON YIELD SPECTROSCOPY; TRANSPORT MEASUREMENTS;

BAND STRUCTURE; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE;

GALLIUM NITRIDE;

EID: 84861805071     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4717716     Document Type: Article

References (24)

1. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000). 10.1126/science.287.5455.1019
2. K. Sato and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 40, L485 (2001). 10.1143/JJAP.40.L485
3. S. Sonoda, S. Shimizu, T. Sasaki, Y. Yamamoto, and H. Hori, J. Cryst. Growth 237-239, 1358 (2002). 10.1016/S0022-0248(01)02183-2
4. M. L. Reed, N. A. El-Masry, H. H. Stadelmaier, M. K. Ritums, M. J. Reed, C. A. Parker, J. C. Roberts, and S. M. Bedair, Appl. Phys. Lett. 79, 3473 (2001). 10.1063/1.1419231
5. A. Luque and A. Martí, Phys. Rev. B 78, 5014 (1997). 10.1103/PhysRevLett.78.5014
6. C. Tablero, A. Luque, and A. Martí, J. Appl. Phys. 105, 033704 (2009). 10.1063/1.3074311
7. A. Luque and A. Martí, Adv. Mater. 22, 106 (2010). 10.1002/adma.200902388
8. P. Palacios, I. Aguilera, K. Sanchez, J. C. Conesa, and P. Wahnon, Phys. Rev. Lett. 101, 046403 (2008). 10.1103/PhysRevLett.101.046403
9. K. S. Burch, D. B. Shrekenhamer, E. J. Singley, J. Stephens, B. L. Sheu, R. K. Kawakami, P. Schiffer, N. Samarth, D. D. Awschalom, and D. N. Basov, Phys. Rev. Lett. 97, 087208 (2006). 10.1103/PhysRevLett.97.087208
10. S. Sonoda, I. Tanaka, H. Ikeno, T. Yamamoto, F. Oba, T. Araki, Y. Yamamoto, K. Suga, Y. Nanishi, Y. Akasaka, K. Kindo, and H. Hori, Appl. Phys. Lett. 90, 012504 (2007). 10.1063/1.2408646
11. S. Sonoda, J. Phys.: Condens. Matter 20, 475201 (2008). 10.1088/0953-8984/20/47/475201
12. J. J. Kim, H. Makino, K. Kobayashi, Y. Takata, T. Yamamoto, T. Hanada, M. W. Cho, E. Ikenaga, M. Yabashi, D. Miwa, Y. Nishino, K. Tamasaku, T. Ishikawa, S. Shin, and T. Yao, Phys. Rev. B 70, 161315(R) (2004). 10.1103/PhysRevB.70. 161315
13. G. S. Song, M. Kobayashi, J. I. Hwang, T. Kataoka, M. Takizawa, A. Fujimori, T. Ohkouchi, Y. Takeda, T. Okane, Y. Saitoh, H. Yamagami, F.-H. Chang, L. Lee, H.-J. Lin, D. J. Huang, C. T. Chen, S. Kimura, M. Funakoshi, S. Hasegawa, and H. Asahi, Phys. Rev. B 78, 033304 (2008). 10.1103/PhysRevB.78. 033304
14. 3 substrate; and Figs. S1(c) and S1(d), estimation of the gap state energy based on the Lucovsky formulas for the GaCrN film with 9 Cr.
15. H. Kirihara and M. Uda, Sci. Instrum. 52, 68 (1981). 10.1063/1.1136448
16. A. L. Patterson, Phys. Rev. 56, 978 (1939). 10.1103/PhysRev.56.978
17. B. Monemar, Phys. Rev. B 10, 676 (1974). 10.1103/PhysRevB.10.676
18. G. Lucovsky, Bull. Am. Phys. Soc. 11, 206 (1966).
19. B. Han, B. W. Wessels, and M. P. Ulmer, Appl. Phys. Lett. 86, 042505 (2005). 10.1063/1.1853525
20. A. Wolos, M. Palczewska, M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, M. Bockowski, I. Grzegory, and S. Porowski, Phys. Rev. B 69, 115210 (2004). 10.1103/PhysRevB.69.115210
21. Y. Nakajima, M. Hoshino, D. Yamashita, and M. Uda, Adv. Quantum Chem. 42, 399 (2003). 10.1016/S0065-3276(03)42063-7
22. C. G. Van de Walle and J. Neugebauer, Nature 423, 626 (2003). 10.1038/nature01665
23. H. B. Michaelson, J. Appl. Phys. 48, 4729 (1997). 10.1063/1.323539
24. A. Luque and A. Martí, Prog. Photovoltaics 9, 73 (2001). 10.1002/pip.354