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Volumn 94, Issue 10, 2010, Pages 1730-1733
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Effects of Ti-incorporation in CuInS2 solar cells
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Author keywords
CuInS2; Intermediate band; Thin film solar cell; Titanium; Titanium oxide
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Indexed keywords
ABSORBER LAYERS;
BULK RECOMBINATION;
CO-EVAPORATIONS;
CURRENT-VOLTAGE MEASUREMENTS;
GRAIN SIZE;
GROWTH PROCESS;
HETEROJUNCTION INTERFACES;
IMPURITY DEFECTS;
INTERFACE RECOMBINATION;
INTERMEDIATE BAND;
INTERMEDIATE BANDS;
LOW TEMPERATURE PHOTOLUMINESCENCE;
NO REDUCTION;
TEMPERATURE DEPENDENT;
THIN FILM SOLAR CELL;
THIN FILM SOLAR CELLS;
TI-INCORPORATION;
TIO;
CONVERSION EFFICIENCY;
CRYSTAL IMPURITIES;
CRYSTAL STRUCTURE;
HETEROJUNCTIONS;
OPEN CIRCUIT VOLTAGE;
PHOTOELECTRICITY;
PHOTOIONIZATION;
PHOTONS;
SOLAR CELLS;
THIN FILMS;
TITANIUM;
VAPOR DEPOSITION;
X RAY PHOTOELECTRON SPECTROSCOPY;
TITANIUM OXIDES;
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EID: 77955415322
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.solmat.2010.05.036 Document Type: Article |
Times cited : (34)
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References (12)
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