Intermediate-band material based on GaAs quantum rings for solar cells

Applied Physics Letters

Volumn 95, Issue 7, 2009, Pages

  Wu, Jiang ^a   Shao, Dali ^a   Li, Zhenhua ^b   Manasreh, M O ^a,b   Kunets, Vasyl P ^b   Wang, Zhiming M ^b   Salamo, G J ^b  

^a 3202 Bell Engineering Center   (United States)

^b Institute of Nanoscale Materials Science and Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE ACTIVE REGION; DROPLET EPITAXY; FOUR-ORDER; GAAS; INTERMEDIATE BANDS; INTERSUBBAND TRANSITIONS; LATTICE-MATCHED; MIDINFRARED; NEAR INFRARED; PHOTORESPONSES; QUANTUM RING; ROOM TEMPERATURE; VOLTAGE RANGES;

CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTRON MOBILITY; GALLIUM ALLOYS; INFRARED DEVICES; NANORINGS; SEMICONDUCTING GALLIUM;

INFRARED SPECTROSCOPY;

EID: 69249192722     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3211971     Document Type: Article

References (2)

1. A. Luque and A. Marti, Phys. Rev. Lett. 0031-9007 78, 5014 (1997). 10.1103/PhysRevLett.78.5014
2. A. Marti, E. Antolín, C. R. Stanley