SCOPUS 정보 검색 플랫폼

Volumn 109, Issue 2, 2011, Pages

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

(7) Okada, Yoshitaka a,b Morioka, Takayuki a,b Yoshida, Katsuhisa a,b Oshima, Ryuji a,b Shoji, Yasushi a,c Inoue, Tomoya d Kita, Takashi a,d

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF TOKYO (Japan)

c UNIVERSITY OF TSUKUBA (Japan)

d KOBE UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INAS; MATRIX; NON-RADIATIVE RECOMBINATIONS; PHOTON ABSORPTIONS; QUANTUM DOT SOLAR CELLS; QUANTUM DOTS; QUANTUM STATE; QUASI-FERMI LEVEL; ROOM TEMPERATURE; SI ATOMS; SI-DOPING; SOLAR SPECTRUM; STAGE OF GROWTH; STRAIN-COMPENSATED; UNIFORM ARRAY;

ABSORPTION SPECTROSCOPY; DOPING (ADDITIVES); INDIUM ARSENIDE; QUANTUM OPTICS; SILICON; SOLAR CELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79551660696 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3533423 Document Type: Article

Times cited : (222)

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