Intermediate bands versus levels in non-radiative recombination

Physica B: Condensed Matter

Volumn 382, Issue 1-2, 2006, Pages 320-327

  Luque, Antonio ^a   Martí, Antonio ^a   Antolín, Elisa ^a   Tablero, César ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

Author keywords

Bulk semiconductor; Deep centers; Impurity levels; Intermediate band; Mott transition; Non radiative recombination

Indexed keywords

ELECTRON TRANSITIONS; ENERGY GAP; IMPURITIES; PROBABILITY DENSITY FUNCTION; RADIATION; SEMICONDUCTOR MATERIALS;

BULK SEMICONDUCTORS; DEEP CENTERS; IMPURITY LEVELS; INTERMEDIATE BAND; MOTT TRANSITION; NON-RADIATIVE RECOMBINATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 33744908281     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2006.03.006     Document Type: Article

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