Improved device performance of InAsGaAs quantum dot solar cells with GaP strain compensation layers

Applied Physics Letters

Volumn 91, Issue 24, 2007, Pages

  Laghumavarapu, R B ^a   El Emawy, M ^a   Nuntawong, N ^a   Moscho, A ^a   Lester, L F ^a   Huffaker, D L ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

DEVICE PERFORMANCE; STRAIN COMPENSATION LAYERS;

SOLAR CELLS;

EID: 37149043490     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2816904     Document Type: Article

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