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Applied Physics Letters

Volumn 96, Issue 6, 2010, Pages

Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy

(5) Zhou, D a Sharma, G a Thomassen, S F a Reenaas, T W a Fimland, B O a

a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; EXTERNAL QUANTUM EFFICIENCY; GAAS; HIGH-DENSITY QUANTUM; INTERMEDIATE-BAND SOLAR CELLS; LARGE CLUSTERS; SPECTRAL RESPONSE; SURFACE MIGRATION; V/III RATIO;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SOLAR CELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 76749155571 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3313938 Document Type: Article

Times cited : (61)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.