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Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer

(8) Tutu, F K a Sellers, I R b Peinado, M G c Pastore, C E c Willis, S M d Watt, A R d Wang, T a Liu, H Y a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b SHARP LABORATORIES OF EUROPE LTD (United Kingdom)

c CASEM (Spain)

d UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; GAAS SOLAR CELLS; HIGH TEMPERATURE; INAS/GAAS; LOW TEMPERATURES; QUANTUM DOT STRUCTURE; SPACER LAYER; STRUCTURAL CHARACTERISTICS; THREADING DISLOCATION;

MULTILAYERS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

GALLIUM ARSENIDE;

EID: 84863275059 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3686184 Document Type: Article

Times cited : (50)

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