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Volumn 88, Issue 9, 2006, Pages

Multiband GaNAsP quaternary alloys

(9) Yu, K M a Walukiewicz, W a Ager III, J W a Bour, D b Farshchi, R c Dubon, O D c Li, S X c Sharp, I D c Haller, E E c

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b APPLIED MATERIALS INC (United States)

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND ANTICROSSING MODEL; CONDUCTION BAND; MULTIBAND GANASP; STRONG OPTICAL TRANSITIONS; VALENCE BAND TO THE LOWER (E-) AND UPPER (E+) CONDUCTION SUBBANDS;

ION IMPLANTATION; NITROGEN; PULSED LASER APPLICATIONS; QUANTUM OPTICS; RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICES; SOLAR CELLS; SUBSTRATES;

GALLIUM ALLOYS;

EID: 33644667581 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2181627 Document Type: Article

Times cited : (135)

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