Extreme voltage recovery in GaAs:Ti intermediate band solar cells

Solar Energy Materials and Solar Cells

Volumn 108, Issue , 2013, Pages 175-179

  Linares, P G ^a   Marti A ^a   Antolin E ^a,f   Ramiro, I ^a   Lopez E ^a   Hernandez E ^a   Fuertes Marron D ^a   Artacho, I ^a   Tobias I ^a   Gerard P ^b   Chaix, C ^b   Campion, R P ^c   Foxon, C T ^c   Stanley, C R ^d   Molina, S I ^e   Luque, A ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

^b RIBER SA   (France)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d UNIVERSITY OF GLASGOW   (United Kingdom)

^e UNIVERSITY OF CÁDIZ   (Spain)

^f INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

Concentrated light; GaAs:Ti; IBSC; Low temperature; Novel IB materials; Voltage recovery

Indexed keywords

CONCENTRATED-LIGHT; GAAS; IBSC; LOW TEMPERATURES; VOLTAGE RECOVERY;

ENERGY GAP; GALLIUM ARSENIDE; NANOSTRUCTURED MATERIALS; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC CELLS; RECOVERY; SEMICONDUCTING GALLIUM; SOLAR CELLS; TEMPERATURE;

MOLECULAR BIOLOGY;

EID: 84867606657     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.09.028     Document Type: Conference Paper

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