Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Oshima, Ryuji ^a   Takata, Ayami ^a,b   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; GALLIUM ALLOYS; HYDROGEN; INDIUM ARSENIDE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; OPTICAL WAVEGUIDES; PHOTOVOLTAIC CELLS; QUANTUM ELECTRONICS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SOLAR POWER GENERATION; SWITCHING CIRCUITS;

HIGH-EFFICIENCY SOLAR CELLS; SELF-ASSEMBLED; STACKED LAYERS; STRAIN-COMPENSATED;

SEMICONDUCTOR QUANTUM DOTS;

EID: 51349102477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2973398     Document Type: Article

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