Open-circuit voltage improvement of InAs/GaAs quantum-dot solar cells using reduced InAs coverage

IEEE Journal of Photovoltaics

Volumn 2, Issue 3, 2012, Pages 269-275

  Bailey, Christopher G ^a   Forbes, David V ^b   Polly, Stephen J ^b   Bittner, Zachary S ^b   Dai, Yushuai ^b   MacKos, Chelsea ^c   Raffaelle, Ryne P ^b   Hubbard, Seth M ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^c EMCORE Corporation   (United States)

Author keywords

InAs coverage; InAs GaAs; nanostructured solar cells; quantum dots (QDs); strain balance; strain compensation; superlattice

Indexed keywords

INAS; INAS/GAAS; NANOSTRUCTURED SOLAR CELLS; STRAIN BALANCE; STRAIN COMPENSATION;

GALLIUM ARSENIDE; INDIUM ARSENIDE; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SUPERLATTICES;

SOLAR CELLS;

EID: 84865169426     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2189047     Document Type: Article

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