Application of the photoreflectance technique to the characterization of quantum dot intermediate band materials for solar cells

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6943-6947

  Canovas E ^a   Marti A ^a   Lopez N ^a   Antolin E ^a   Linares, P G ^a   Farmer, C D ^b   Stanley, C R ^b   Luque, A ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Intermediate band; Photoreflectance; Quantum dots; Solar cells

Indexed keywords

ABSORPTION; BAND STRUCTURE; CELLS; DIRECT ENERGY CONVERSION; ENERGY GAP; MULTIPHOTON PROCESSES; OPTICAL WAVEGUIDES; PHOTOVOLTAIC CELLS; PIGMENTS; QUANTUM ELECTRONICS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SOLAR POWER GENERATION; WAVE FUNCTIONS;

BAND GAPS; DENSITY OF STATES (DOF); ELECTRONIC BANDS; ELSEVIER (CO); ENERGY LEVELS; INTERMEDIATE BAND (IB); INTERMEDIATE BAND MATERIALS (MIB); INTERMEDIATE BAND SOLAR CELLS (IBSC); PHOTOREFLECTANCE (PR); PHOTOVOLTAIC DEVICES; QUANTUM DOT (CO); ROOM-TEMPERATURE (RT); WAVE-FUNCTIONS;

SEMICONDUCTOR MATERIALS;

EID: 45849088848     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.038     Document Type: Article

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