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Volumn 108, Issue 6, 2010, Pages

Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ACTIVATION ENERGY; ALUMINUM COMPOUNDS; ENERGY GAP; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOCRYSTALS; SEMICONDUCTING GALLIUM; SOLAR CELLS;

EID: 77957736868     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3468520     Document Type: Article
Times cited : (165)

References (47)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.