Strong enhancement of solar cell efficiency due to quantum dots with built-in charge

Nano Letters

Volumn 11, Issue 6, 2011, Pages 2311-2317

  Sablon, Kimberly A ^a   Little, John W ^a   Mitin, Vladimir ^b   Sergeev, Andrei ^b   Vagidov, Nizami ^b   Reinhardt, Kitt ^c  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

^c AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

Author keywords

built in charge; doping; infrared radiation; quantum dots; Solar cell

Indexed keywords

BUILT-IN CHARGE; FAST ELECTRONS; GAAS; INAS/GAAS; INTER-SUBBAND; IR ENERGY; N-DOPED; N-DOPING; POWER CONVERSION EFFICIENCIES; QUANTUM DOT; QUANTUM DOT SOLAR CELLS; QUANTUM DOT TRANSITION; SOLAR CELL EFFICIENCIES; STRONG ENHANCEMENT;

CONVERSION EFFICIENCY; ENERGY HARVESTING; INFRARED RADIATION; OPEN CIRCUIT VOLTAGE; PHOSPHORUS; SEMICONDUCTOR QUANTUM DOTS; SOLAR ENERGY;

QUANTUM EFFICIENCY;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMISTRY; POWER SUPPLY; SOLAR ENERGY; SURFACE PROPERTY;

ARSENICALS; ELECTRIC POWER SUPPLIES; GALLIUM; INDIUM; QUANTUM DOTS; SOLAR ENERGY; SURFACE PROPERTIES;

EID: 79958794163     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl200543v     Document Type: Article

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