InAs/AlGaAs quantum dot intermediate band solar cells with enlarged sub-bandgaps

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 652-656

  Ramiro, I ^a   Antolin E ^a,c   Steer, M J ^b   Linares, P G ^a   Hernandez E ^a   Artacho, I ^a   Lopez E ^a   Ben, T ^d   Ripalda, J M ^c   Molina, S I ^d   Briones, F ^c   Stanley, C R ^b   Marti A ^a   Luque, A ^a  

^a INSTITUTO DE ENERGÍA SOLAR   (Spain)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^d UNIVERSITY OF CÁDIZ   (Spain)

Author keywords

carrier escape; intermediate band solar cells; Novel concepts; quantum dots

Indexed keywords

AL CONTENT; CAPPING LAYER; CARRIER ESCAPES; ENERGY SPLIT; HOST MATERIALS; IB THEORY; INAS; INAS/GAAS; INAS/GAAS QUANTUM DOTS; INTERMEDIATE-BAND SOLAR CELLS; KEY OPERATIONS; LOW TEMPERATURES; MONOCHROMATIC ILLUMINATION; NOVEL CONCEPT; OUTPUT VOLTAGES; ROOM TEMPERATURE; THERMAL CARRIERS; THERMAL ESCAPE; TWO PHOTON;

ENERGY GAP; NANOSTRUCTURED MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS;

ACTIVATION ENERGY;

EID: 84869398331     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317694     Document Type: Conference Paper

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