Epitaxial graphene on SiC: From carrier density engineering to quasi-free standing graphene by atomic intercalation

Journal of Physics D: Applied Physics

Volumn 47, Issue 9, 2014, Pages

  Forti, S ^a   Starke, U ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894470896     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/47/9/094013     Document Type: Article

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