Revealing the atomic structure of the buffer layer between SiC(0 0 0 1) and epitaxial graphene

Carbon

Volumn 51, Issue 1, 2013, Pages 249-254

  Goler, Sarah ^a,b   Coletti, Camilla ^a,c   Piazza, Vincenzo ^a   Pingue, Pasqualantonio ^b   Colangelo, Francesco ^b   Pellegrini, Vittorio ^b   Emtsev, Konstantin V ^c   Forti, Stiven ^c   Starke, Ulrich ^c   Beltram, Fabio ^a,b   Heun, Stefan ^b  

^a CENTER FOR NANOTECHNOLOGY INNOVATION NEST   (Italy)

^b ISTITUTO NANOSCIENZE CNR   (Italy)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC RESOLUTION; CARBON RICH; DEFECT SITES; EPITAXIAL GRAPHENE; HYDROGEN INTERCALATION; INTERFACE LAYER; INTERFACIAL LAYER; PERIODIC CORRUGATION; SIC(0 0 0 1); STM IMAGES;

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; GRAPHENE; HYDROGEN; INTERFACES (MATERIALS); SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE;

BUFFER LAYERS;

EID: 84868146130     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2012.08.050     Document Type: Article

References (28)

1. P.N. First, W.A. de Heer, T. Seyller, C. Berger, J.A. Stroscio, and J.S. Moon Epitaxial graphenes on silicon carbide MRS Bull 35 2010 296 305
2. K.V. Emtsev, A. Bostwick, K. Horn, J. Jobst, G.L. Kellogg, and L. Ley Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide Nat Mater 8 2009 203 207
3. C. Virojanadara, M. Syväjarvi, R. Yakimova, L.I. Johansson, A.A. Zakharov, and T. Balasubramanian Homogeneous large-area graphene layer growth on 6H-SiC(0 0 0 1) Phys Rev B 78 2008 245403-1 245403-6
4. U. Starke, and C. Riedl Epitaxial graphene on SiC(0 0 0 1) and SiC(0 0 0 -1): from surface reconstructions to carbon electronics J Phys: Condens Matter 21 2009 134016-1 12
5. W. Chen, H. Xu, L. Liu, X. Gao, D. Qi, and G. Peng Atomic structure of the 6H-SiC(0 0 0 1) nanomesh Surf Sci 596 2005 176 186 (Pubitemid 41630675)
6. L. Li, and I.S.T. Tsong Atomic structures of 6H-SiC (0 0 0 1) and (0 0 0 -1) surfaces Surf Sci 351 1996 141 148
7. P. Mårtensson, F. Owman, and L.I. Johansson Morphology, atomic and electronic structure of 6H-SiC(0 0 0 1) surfaces Phys Stat Sol B 202 1997 501 528
8. C. Riedl, U. Starke, J. Bernhardt, M. Franke, and K. Heinz Structural properties of the graphene-SiC(0 0 0 1) interface as a key for the preparation of homogeneous large-terrace graphene surfaces Phys Rev B 76 2007 245406-1 245406-8
9. A.J. Van Bommel, J.E. Crombeen, and A. Van Tooren LEED and auger electron observations of the SiC(0 0 0 1) surface Surf Sci 48 1975 463 472
10. K.V. Emtsev, F. Speck, T. Seyller, L. Ley, and J.D. Riley Interaction, growth, and ordering of epitaxial graphene on SiC{0 0 0 1} surfaces: a comparative photoelectron spectroscopy study Phys Rev B 77 2008 155303-1 10
11. C. Riedl, C. Coletti, and U. Starke Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation J Phys D: Appl Phys 43 2010 374009-1 17
12. F. Varchon, P. Mallet, J.Y. Veuillen, and L. Magaud Ripples in epitaxial graphene on the Si-terminated SiC(0 0 0 1) surface Phys Rev B 77 2008 235412-1 235412-8
13. S. Kim, J. Ihm, H.J. Choi, and Y.-W. Son Origin of anomalous electronic structures of epitaxial graphene on silicon carbide Phys Rev Lett 100 2008 176802-1 176802-4
14. P. Lauffer, K.V. Emtsev, R. Graupner, T. Seyller, L. Ley, and S.A. Reshanov Atomic and electronic structure of few-layer graphene on SiC(0 0 0 1) studied with scanning tunneling microscopy and spectroscopy Phys Rev B 77 2008 155426-1 10
15. C. Riedl, C. Coletti, T. Iwasaki, A.A. Zakharov, and U. Starke Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation Phys Rev Lett 103 2009 246804-1 246804-4
16. Y. Qi, S.H. Rhim, G.F. Sun, M. Weinert, and L. Li Epitaxial graphene on SiC(0 0 0 1): more than just honeycombs Phys Rev Lett 105 2010 085502-1 085502-4
17. S. Forti, K.V. Emtsev, C. Coletti, A.A. Zakharov, C. Riedl, and U. Starke Large-area homogeneous quasifree standing epitaxial graphene on SiC(0 0 0 1): electronic and structural characterization Phys Rev B 84 2011 125449-1 10
18. M.L. Bolen, S.E. Harrison, L.B. Biedermann, and M.A. Capano Graphene formation mechanisms on 4H-SiC(0001) Phys Rev B 80 2009 115433-1 115433-9
19. I. Horcas, R. Fernandez, J.M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A.M. Baro WSXM: a software for scanning probe microscopy and a tool for nanotechnology Rev Sci Instrum 78 2007 013705-1 013705-8
20. D.A. Schmidt, T. Ohta, and T.E. Beechem Strain and charge carrier coupling in epitaxial graphene Phys Rev B 84 2011 235422-1 235422-8
21. J. Röhrl, M. Hundhausen, K.V. Emtsev, T. Seyller, R. Graupner, and L. Ley Raman spectra of epitaxial graphene on SiC(0 0 0 1) Appl Phys Lett 92 2008 201918-1 201918-3
22. F. Speck, J. Jobst, F. Fromm, M. Ostler, D. Waldmann, and M. Hundhausen The quasi-free-standing nature of graphene on H-saturated SiC(0 0 0 1) Appl Phys Lett 99 2011 122106-1 122106-3
23. F. Owman, and P. Mårtensson The SiC(0 0 0 1) 6√3 × 6√3 reconstruction studied with STM and LEED Surf Sci 369 1996 126 136 (Pubitemid 126390907)
24. G.M. Rutter, N.P. Guisinger, J.N. Crain, E.A.A. Jarvis, M.D. Stiles, and T. Li Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy Phys Rev B 76 2007 235416-1 235416-6
25. P. Mallet, F. Varchon, C. Naud, L. Magaud, C. Berger, and J.Y. Veuillen Electron states of mono- and bilayer graphene on SiC probed by scanning-tunneling microscopy Phys Rev B 76 2007 041403-1 041403-4
26. J.Y. Veuillen, F. Hiebel, L. Magaud, P. Mallet, and F. Varchon Interface structure of graphene on SiC: an ab initio and STM approach J Phys D: Appl Phys 43 2010 374008-1 15
27. A. Principi, M. Polini, R. Asgari, and A.H. MacDonald The tunneling density-of-states of interacting massless dirac fermions Solid State Commun 152 2012 1456 1459
28. V. Tozzini, and V. Pellegrini Reversible hydrogen storage by controlled buckling of graphene layers J Phys Chem C 115 2011 25523 25528