Highly efficient spin transport in epitaxial graphene on SiC

Nature Physics

Volumn 8, Issue 7, 2012, Pages 557-561

  Dlubak, Bruno ^a,b   Martin, Marie Blandine ^a,b   Deranlot, Cyrile ^a,b   Servet, Bernard ^c   Xavier, Stéphane ^c   Mattana, Richard ^a,b   Sprinkle, Mike ^d   Berger, Claire ^d,e   De Heer, Walt A ^d   Petroff, Frédéric ^a,b   Anane, Abdelmadjid ^a,b   Seneor, Pierre ^a,b   Fert, Albert ^a,b  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c THALES RESEARCH AND TECHNOLOGY   (France)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^e LABORATOIRE DE CRISTALLOGRAPHIE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; METALS; MOS DEVICES; NETWORK ARCHITECTURE; OXIDE SEMICONDUCTORS; SILICON CARBIDE; TUNNEL JUNCTIONS; WIDE BAND GAP SEMICONDUCTORS;

COMPLEX STRUCTURE; EPITAXIAL GRAPHENE; HIGH IMPEDANCE; SPIN PROPAGATION; SPIN TRANSPORT; SPIN-DIFFUSION LENGTH; SPINTRONICS APPLICATION; TWO TERMINALS;

CMOS INTEGRATED CIRCUITS;

EID: 84863439003     PISSN: 17452473     EISSN: 17452481     Source Type: Journal    
DOI: 10.1038/nphys2331     Document Type: Article

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