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Volumn 98, Issue 18, 2011, Pages

Highly p -doped epitaxial graphene obtained by fluorine intercalation

(11) Walter, Andrew L a,b Jeon, Ki Joon c Bostwick, Aaron a Speck, Florian d Ostler, Markus d Seyller, Thomas d Moreschini, Luca a Kim, Yong Su a,e Chang, Young Jun a,b Horn, Karsten b Rotenberg, Eli a

a LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT (Germany)

c University of Ulsan (South Korea)

d UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

e Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIRAC POINT; EPITAXIAL GRAPHENE; FLUORINE ATOMS; HOLE DENSITIES;

EPITAXIAL GROWTH; GRAPHENE; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

FLUORINE;

EID: 79957532084 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3586256 Document Type: Article

Times cited : (157)

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