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Volumn 43, Issue 37, 2010, Pages

Structural and electronic properties of epitaxial Graphene on SiC(0001): A review of growth, characterization, transfer doping and hydrogen intercalation

Author keywords

[No Author keywords available]

Indexed keywords

A-CARBON; AMBIPOLAR PROPERTIES; ASYMMETRIC ELECTRIC FIELD; ATOMIC STRUCTURE; BAND GAPS; BI-LAYER; BILAYER SYSTEMS; CARBON LAYERS; CHARGE NEUTRALITY; CONTROLLED GROWTH; COVALENT BONDING; DENSITY OF STATE; DEVICE TECHNOLOGIES; DIRAC POINT; ELECTRONIC INFLUENCE; ENERGY BANDGAPS; EPITAXIAL BILAYERS; EPITAXIAL GRAPHENE; F4-TCNQ; FERMI ENERGY; GRAPHENE LAYERS; HOLE-DOPING; HYDROGEN INTERCALATION; IN-SITU GROWTH; INITIAL VALUES; INTERCALATION PROCESS; INTERFACE LAYER; MONOATOMIC LAYER; N-DOPED; NANO-DEVICES; SIC SUBSTRATES; SIC(0 0 0 1); TETRAFLUORO-TETRACYANOQUINODIMETHANE; TRANSFER-DOPING;

EID: 78249233540     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/43/37/374009     Document Type: Article
Times cited : (501)

References (88)
  • 6
  • 28
    • 33744469329 scopus 로고    scopus 로고
    • Berger C et al 2006 Science 312 1191
    • (2006) Science , vol.312 , pp. 1191
    • Berger, C.1
  • 65
    • 84914202563 scopus 로고    scopus 로고
    • University Erlangen-Nürnberg
    • Emtsev K V 2009 Dissertation University Erlangen-Nürnberg, www.opus.ub.uni-erlangen.de/opus/volltexte/2009/1360
    • (2009) Dissertation
    • Emtsev, K.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.