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Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

Graphene buffer layer on Si-terminated SiC studied with an empirical interatomic potential

(4) Lampin, Evelyne a Priester, Catherine a Krzeminski, Christophe a Magaud, Laurence b

a INSTITUT D ELECTRONIQUE (France)

b LABORATOIRE DE CRISTALLOGRAPHIE (France)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ATOMISTIC STRUCTURE; CLASSICAL MOLECULAR DYNAMICS; ENERGY SURFACE; EQUILIBRIUM STATE; GRAPHENE GROWTH; HEXAGONAL PATTERN; INITIAL CONFIGURATION; INTERATOMIC POTENTIAL; MINIMAL ENERGY;

BUFFER LAYERS; GRAPHENE; GRAPHITE; MOLECULAR DYNAMICS; SILICON CARBIDE;

SURFACE STRUCTURE;

EID: 77952962104 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3357297 Document Type: Article

Times cited : (29)

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