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Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 2, 2010, Pages 300-303

Graphene growth by molecular beam epitaxy using a solid carbon source

(5) Moreau, E a Ferrer, F J a Vignaud, D a Godey, S a Wallart, X a

a INSTITUT D ELECTRONIQUE (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC TERRACES; GRAPHENE GROWTH; GRAPHENES; GRAPHITIZATION PROCESS; SILICON CARBIDE SUBSTRATES; SOLID CARBON SOURCES; SUBSTRATE STRUCTURE; TEMPERATURE RANGE; X RAY PHOTOEMISSION SPECTROSCOPY;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; EMISSION SPECTROSCOPY; GRAPHENE; GRAPHITE; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTOR QUANTUM WIRES; SILICON CARBIDE; SOIL CONSERVATION; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

CRYSTAL ATOMIC STRUCTURE;

EID: 76949102392 PISSN: 18626300 EISSN: 18626319 Source Type: Journal
DOI: 10.1002/pssa.200982412 Document Type: Article

Times cited : (92)

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