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Applied Physics Letters

Volumn 99, Issue 8, 2011, Pages

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

(6) Coletti, C a,b Emtsev, K V a Zakharov, A A c Ouisse, T d Chaussende, D d Starke, U a

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b CENTER FOR NANOTECHNOLOGY INNOVATION NEST (Italy)

c LUND UNIVERSITY (Sweden)

d MINATEC (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COST EFFECTIVENESS; ELECTRONS; EPITAXIAL GROWTH; MONOLAYERS; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDE;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; CARBON LAYERS; COST EFFECTIVE; CUBIC SILICON CARBIDE; GRAPHENE GROWTH; LOW ENERGY ELECTRON MICROSCOPY; X RAY PHOTOEMISSION SPECTROSCOPY;

GRAPHENE;

EID: 80052403985 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3618674 Document Type: Article

Times cited : (66)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.