SCOPUS 정보 검색 플랫폼

Volumn 22, Issue 43, 2012, Pages 23120-23128

Low temperature and solution-processed Na-doped zinc oxide transparent thin film transistors with reliable electrical performance using methanol developing and surface engineering

(6) Kim, Kyongjun a Park, Si Yun a Lim, Keon Hee a Shin, Chaeho b Myoung, Jae Min c Kim, Youn Sang a

a Seoul National University (South Korea)

b SAMSUNG Electronics (South Korea)

c Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADVANCED PROCESS; AMBIENT CONDITIONS; DIRECT-PATTERNING; DROP-CASTING; ELECTRICAL PERFORMANCE; HIGH ELECTRON MOBILITY; INFORMATION TECHNOLOGY INDUSTRY; LOW TEMPERATURES; LOW-TEMPERATURE SINTERING; METAL OXIDE PRECURSORS; NA DOPED; NA-DOPED ZNO; OPERATIONAL STABILITY; PATTERNING PROCESS; PLASTIC SUBSTRATES; SOLUTION-PROCESSED; SURFACE ENGINEERING; TRANSPARENT ELECTRONICS; TRANSPARENT THIN FILM TRANSISTOR; ZINC OXIDE (ZNO); ZNO;

AMMONIA; ELECTRON MOBILITY; INFORMATION TECHNOLOGY; METALLIC COMPOUNDS; METHANOL; PHOTOLITHOGRAPHY; SINTERING; SURFACES; TEMPERATURE; THIN FILM TRANSISTORS;

ZINC OXIDE;

EID: 84867494396 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c2jm33790h Document Type: Article

Times cited : (58)

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