Ferroelectric Pb(Zr,Ti)O3 epitaxial layers on GaAs

Applied Physics Letters

Volumn 103, Issue 21, 2013, Pages

  Louahadj, L ^a   Le Bourdais, D ^b   Largeau, L ^c   Agnus, G ^b   Mazet, L ^d   Bachelet, R ^d   Regreny, P ^d   Albertini, D ^d   Pillard, V ^b   Dubourdieu, C ^d   Gautier, B ^d   Lecoeur, P ^b   Saint Girons, G ^d  

^a RIBER SA   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c CNRS   (France)

^d INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SCALE; ELECTRICAL CHARACTERIZATION; PB(ZR , TI)O; PIEZOFORCE MICROSCOPY; PZT LAYER; RELATIVE DIELECTRIC PERMITTIVITY; SRTIO; STRUCTURAL QUALITIES;

EPITAXIAL GROWTH; FERROELECTRICITY; LEAD; MOLECULAR BEAM EPITAXY; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; STRONTIUM TITANATES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZIRCONIUM;

GALLIUM ARSENIDE;

EID: 84888399259     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4831738     Document Type: Article

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