Fabrication of Pb(Zr,Ti)O3/MgO/GaN/GaAs structure for optoelectronic device applications

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 227-230

  Masuda, Atsushi ^a   Morita, Shinya ^b   Shigeno, Hideki ^b,d   Morimoto, Akiharu ^b   Shimizu, Tatsuo ^b   Wu, Jun ^c   Yaguchi, Hiroyuki ^c   Onabe, Kentaro ^c  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

Cubic GaN; Ferroelectric waveguide; MgO buffer layer; Pb(Zr,Ti)O3 (PZT); Pulsed laser ablation (PLA); Pulsed laser deposition (PLD)

Indexed keywords

DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; FILM GROWTH; LASER ABLATION; MAGNESIA; OPTOELECTRONIC DEVICES; PEROVSKITE; PULSED LASER APPLICATIONS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

CUBE ON CUBE EPITAXY; PULSED LASED DEPOSITION;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0032092953     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00241-3     Document Type: Article

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