Epitaxial PbxZr1-xTiO3 on GaN

Journal of Applied Physics

Volumn 113, Issue 7, 2013, Pages

  Paisley, E A ^a   Craft, H S ^a   Losego, M D ^a   Lu, H ^b   Gruverman, A ^b   Collazo, R ^a   Sitar, Z ^a   Maria, J P ^a  

^a North Carolina State University   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; DEPOSITION TEMPERATURES; DIELECTRIC RESPONSE; ELECTRICAL ANALYSIS; ELECTRICAL CHARACTERIZATION; EPITAXIAL PZT; EX SITU; FERROELECTRIC SWITCHING; GROWTH PROCESS; INTER-DIGITAL CAPACITORS; MGO; PIEZORESPONSE FORCE MICROSCOPY; PZT; SYNTHESIS AND CHARACTERIZATIONS; TIO;

FERROELECTRICITY; GALLIUM NITRIDE; LEAD; OPTIMIZATION; PEROVSKITE; X RAY DIFFRACTION; ZIRCONIUM;

EPITAXIAL GROWTH;

EID: 84874630769     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4792599     Document Type: Article

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