Structural and electrical properties of Pb(Zr,Ti)O3 grown on (0001) GaN using a double PbTiO3/PbO bridge layer

Applied Physics Letters

Volumn 91, Issue 18, 2007, Pages

  Xiao, Bo ^a   Gu, Xing ^a   Izyumskaya, Natalia ^a   Avrutin, Vitaliy ^a   Xie, Jinqiao ^a   Liu, Huiyong ^a   Morkoç, Hadis ^a  

^a Virginia Commonwealth University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; LEAD COMPOUNDS; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; SILICON; X RAY DIFFRACTION;

BRIDGE LAYERS; FERROELECTRIC BEHAVIORS; LEAD ZIRCONATE TITANATE; SILICON-DOPED GAN;

FERROELECTRIC FILMS;

EID: 35649025759     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2805220     Document Type: Article

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