Epitaxial growth and electrical measurement of single crystalline Pb(Zr0.52Ti0.48)O3 thin film on Si(001) for micro-electromechanical systems

Thin Solid Films

Volumn 520, Issue 14, 2012, Pages 4572-4575

  Yin, S ^a,b   Niu, G ^a   Vilquin, B ^a   Gautier, B ^c   Le Rhun, G ^b   Defay, E ^b   Robach, Y ^a  

^a ECOLE CENTRALE DE LYON   (France)

^b CEA LETI   (France)

^c UNIVERSITÉ DE LYON   (France)

Author keywords

Ferroelectric; Molecular beam epitaxy; Non volatile memory; Piezoelectric; PZT; Sol gel; Thin film

Indexed keywords

ARTIFICIAL DOMAIN; CRYSTALLINE QUALITY; ELECTRICAL CHARACTERISTIC; ELECTRICAL MEASUREMENT; EPITAXIAL RELATIONSHIPS; HIGH CONTRAST; MEMORY WINDOW; NON-VOLATILE; NON-VOLATILE MEMORIES; PIEZOELECTRIC; PIEZOELECTRIC PROPERTY; PIEZORESPONSE FORCE MICROSCOPY; PZT; PZT FILM; PZT THIN FILM; SI (001) SUBSTRATE; SI SUBSTRATES; SI(0 0 1); SINGLE-CRYSTALLINE; SRTIO;

EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; LEAD; MEMS; MOLECULAR BEAM EPITAXY; PIEZOELECTRICITY; SILICON; SOL-GEL PROCESS; SOL-GELS; THIN FILMS; X RAY DIFFRACTION; ZIRCONIUM;

CRYSTALLINE MATERIALS;

EID: 84860275840     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.11.073     Document Type: Conference Paper

References (28)

1. K. Tonisch, V. Cimalla, Ch. Foerster, H. Romanus, O. Ambacher, and D. Dontsov Sens. Actuators, A: Phys. 132 2006 658
2. Arora Aarti, Arora Anil, V.K. Dwivedi, P.J. George, K. Sreenivas, and Gupta Vinay Sensors and Actuators A: Phys. 141 2008 256
3. B.M. Melnick, J. Gregory, and C.A. Paz-de Araujo Integr. Ferroelectr. 11 1995 145
4. Y. Yu, T. Ren, and L. Liu Integr. Ferroelectr. 69 2005 367
5. Shen Dongna, Park Jung-Hyun, Noh Joo Hyon, Choe Song-Yul, Kim Seung-Hyun, Howard C. Wikle III, and Kim Dong-Joo Sens. Actuators, A: Phys. 154 2009 103
6. J.F. Scott Science 315 2007 954
7. James F. Scott, A. Carlos, and Paz de Araujo Science 246 1989 1400
8. J.L. Moll, and Y. Tarui IEEE Trans. Electron Devices ED-10 1963 338
9. S.Y. Wu IEEE Trans. Electron Devices ED-21 1974 499
10. H. Ishiwara Mater. Res. Soc. Symp. Proc. 596 2000 427
11. B. Vilquin, R. Bouregba, G. Poullain, M. Hervieu, and H. Murray Eur. Phys. J. Appl. Phys. 15 2001 153
12. H.N. Lee, and D. Hesse Appl. Phys. Lett. 80 2002 1040
13. Y. Wang, C. Ganpule, B.T. Liu, H. Li, K. Mori, B. Hill, M. Wuttig, R. Ramesh, J. Finder, Z. Yu, R. Droopad, and K. Eisenbeiser Appl. Phys. Lett. 80 2002 97
14. R.A. McKee, F.J. Walker, and M.F. Chisholm Phys. Rev. Lett. 81 1998 3014
15. G. Niu, G. Saint-Girons, B. Vilquin, G. Delhaye, J.-L. Maurice, C. Botella, Y. Robach, and G. Hollinger Appl. Phys. Lett. 95 2009 062902
16. G. Niu, J. Penuelas, L. Largeau, B. Vilquin, J.L. Maurice, C. Botella, G. Hollinger, and G. Saint-Girons Phys. Rev. B 83 2011 054105
17. H. Xin, W. Ren, X. Wu, P. Shi, W. Zhu, and X. Zhang Ferroelectrics 406 2010 206
18. S.K. Streiffer, C.B. Parker, A.E. Romanov, M.J. Lefevre, L. Zhao, J.S. Speck, W. Pompe, C.M. Foster, and G.R. Bai J. Appl. Phys. 83 1998 2742
19. A.E. Romanov, M.J. Lefevre, J.S. Speck, W. Pompe, S.K. Streiffer, and C.M. Foster J. Appl. Phys. 83 1998 2754
20. M.-W. Chu, I. Szafraniak, D. Hesse, M. Alexe, and U. Gosele Phys. Rev. B 72 2005 174112
21. B.A. Tuttle, J.A. Voigt, T.J. Garino, D.C. Goodnow, R.W. Schwartz, D.L. Lamppa, T.J. Headley, and M.O. Eatough Proceedings of the Eighth IEEE International Symposium on Applications of Ferroelectrics, New York, 30 Augutst-2 September 1992 344
22. S.M. Sze Physics of Semiconductor Devices 1981 Wiley New York
23. S.L. Miller, and P.J. McWhorter J. Appl. Phys. 72 1992 5999
24. S.L. Miller, R.D. Nasby, J.R. Schwank, and P.V. Dressendorfer J. Appl. Phys. 68 1990 6463
25. S.L. Miller, J.R. Schwank, R.D. Nasby, and M.S. Rodger J. Appl. Phys. 70 1991 2849
26. T. Kanashima, and M. Okuyama Jpn. J. Appl. Phys., Part 1 38 1999 2044
27. P.-C. Chan, W.-C. Shih, I.Y.-K. Chang, and J.Y.-M. Lee J. Vac. Sci. Technol., B 27 2009 1026
28. Ju Cheol Shin, Cheol Seong Hwang, and Hyeong Joon Kim Appl. Phys. Lett. 75 1999 3411