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Thin Solid Films

Volumn 484, Issue 1-2, 2005, Pages 154-159

Interfacial nanochemistry and electrical properties of Pb(Zr 0.3Ti0.7)O3 films on GaN/sapphire

(4) Cao, W a Bhaskar, S a Li, J a Dey, S K a

a Arizona State University (United States)

Author keywords

EELS; GaN; Interfaces; Pb(Zr, Ti)O3

Indexed keywords

ELECTRIC PROPERTIES; ELECTRON ENERGY LOSS SPECTROSCOPY; GALLIUM NITRIDE; INTERFACES (MATERIALS); LEAD COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; SURFACE CHEMISTRY; X RAY DIFFRACTION ANALYSIS;

ASYMMETRICAL POLARIZATION; CAPACITANCE DENSITY; NANOCHEMISTRY; PB(ZR, TI)O3;

THIN FILMS;

EID: 19944373433 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.02.034 Document Type: Article

Times cited : (30)

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