Electrical properties of ferroelectric BaTiO3 thin film on SrTiO3 buffered GaAs by laser molecular beam epitaxy

Applied Physics Letters

Volumn 94, Issue 3, 2009, Pages

  Huang, W ^a   Wu, Z P ^a   Hao, J H ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; CRYSTAL GROWTH; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OXIDE MINERALS; PEROVSKITE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; STRONTIUM ALLOYS; THIN FILM DEVICES; THIN FILMS;

BODY-CENTERED-CUBIC; ELECTRICAL PROPERTIES; EPITAXIALLY GROWN; GAAS; GAAS SUBSTRATES; HETEROEPITAXIAL STRUCTURES; IN-PLANE RELATIONSHIPS; INTERFACIAL LAYERS; LASER MOLECULAR BEAM EPITAXIES; LAYER-BY-LAYER MODES; LEAKAGE CURRENT DENSITIES; REMNANT POLARIZATIONS;

GALLIUM ALLOYS;

EID: 58849100463     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3075955     Document Type: Article

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