Properties of epitaxial BaTiO3 deposited on GaAs

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Contreras Guerrero, R ^a   Veazey, J P ^b   Levy, J ^b   Droopad, R ^a  

^a TEXAS STATE UNIVERSITY   (United States)

^b UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BATIO; C-AXIS ORIENTATIONS; COERCIVE VOLTAGES; CRYSTALLINITIES; FERROELECTRIC DOMAINS; FULL WIDTH HALF MAXIMUM; GAAS; INPLANE ROTATION; LATTICE-MATCHED; NUCLEATION LAYERS; PIEZORESPONSE; PIEZORESPONSE FORCE MICROSCOPY; SRTIO; THICK LAYERS; UNIT CELLS;

EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; OXIDE FILMS; SEMICONDUCTING GALLIUM; X RAY DIFFRACTION;

BARIUM COMPOUNDS;

EID: 84872291600     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773988     Document Type: Article

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