Enhanced critical temperature in epitaxial ferroelectric Pb (Zr 0.2 Ti0.8) O3 thin films on silicon

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Sambri, A ^a   Gariglio, S ^a   Torres Pardo, A ^a   Triscone, J M ^a   Stphan O ^b   Reiner, J W ^c   Ahn, C H ^c  

^a UNIVERSITY OF GENEVA   (Switzerland)

^b UNIVERSITÉ PARIS SUD   (France)

^c Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK VALUE; CLAMPING EFFECTS; CRITICAL TEMPERATURES; EPITAXIAL FERROELECTRIC; FERROELECTRIC PARAELECTRIC TRANSITION; HETEROSTRUCTURES; STRUCTURAL AND ELECTRICAL PROPERTIES;

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FERROELECTRICITY; LEAD; SILICON WAFERS; TEMPERATURE; THIN FILMS; X RAY DIFFRACTION; ZIRCONIUM;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78651277417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3532110     Document Type: Article

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