Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates

Journal of Crystal Growth

Volumn 387, Issue , 2014, Pages 16-22

  Liu, Fang ^a   Huang, Li ^a   Kamaladasa, Ranga ^a   Picard, Yoosuf N ^a   Preble, Edward A ^b   Paskova, Tanya ^b   Evans, Keith R ^b   Davis, Robert F ^a   Porter, Lisa M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

A1. Electron channeling contrast imaging (ECCI); A1. Threading dislocation (TD); A1. V defect; A3. Multi quantum wells (MQW); B1. GaN; B1. InGaN

Indexed keywords

B1. GAN; B1. INGAN; ELECTRON CHANNELING CONTRASTS; MULTIQUANTUM WELLS; THREADING DISLOCATION; V-DEFECTS;

DEFECTS; EPITAXIAL FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; SAPPHIRE; SILICON CARBIDE; SUBSTRATES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84887717698     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2013.10.026     Document Type: Article

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