Sequential growths of AlN and GaN layers on as-polished 6H-SiC(0001) substrates

Acta Materialia

Volumn 57, Issue 14, 2009, Pages 4001-4008

  Reitmeier, Z J ^a   Einfeldt, S ^a   Davis, R F ^a   Zhang, Xinyu ^b   Fang, Xialong ^b   Mahajan, S ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

Dislocations; Electron microscopy; Epitaxy; Group III nitrides; Heteroepitaxy

Indexed keywords

ALN; ALN FILMS; DISLOCATION DENSITIES; DISLOCATION NETWORKS; DISLOCATIONS; EPITAXY; GAN FILM; GAN ISLANDS; GAN LAYERS; GROUP III NITRIDES; HETEROEPITAXY; LATERAL GROWTH; METAL-ORGANIC VAPOR PHASE EPITAXY; PLANAR LAYERS; SEQUENTIAL GROWTH; SIC SUBSTRATES; SURFACE MICROSTRUCTURES; VERTICAL GROWTH;

ATOMIC FORCE MICROSCOPY; COALESCENCE; ELECTRON MICROSCOPES; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROSTRUCTURE; PHASE INTERFACES; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SOIL CONSERVATION; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 67650168905     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.04.026     Document Type: Article

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