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Volumn 81, Issue 12, 2010, Pages

Inclined dislocation-pair relaxation mechanism in homoepitaxial green GaInN/GaN light-emitting diodes

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EID: 77955151293     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.125325     Document Type: Article
Times cited : (33)

References (28)
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    • 42249107245 scopus 로고    scopus 로고
    • in edited by F. A. Ponce et al., MRS Symposia Proceedings No. Materials Research Society, Pittsburgh
    • I. Akasaki, in Nitride Semiconductors, edited by, F. A. Ponce,,, MRS Symposia Proceedings No. 482 (Materials Research Society, Pittsburgh, 1998), p. 1.
    • (1998) Nitride Semiconductors , vol.482 , pp. 1
    • Akasaki, I.1
  • 24
    • 0001495657 scopus 로고    scopus 로고
    • 10.1063/1.366114
    • A. F. Wright, J. Appl. Phys. 82, 2833 (1997). 10.1063/1.366114
    • (1997) J. Appl. Phys. , vol.82 , pp. 2833
    • Wright, A.F.1
  • 27
    • 77955167343 scopus 로고    scopus 로고
    • A third Burgers vector may be needed to complete the Burgers circuit in 120° arrangement
    • A third Burgers vector may be needed to complete the Burgers circuit in 120 ° arrangement.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.