Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

Applied Physics Letters

Volumn 101, Issue 25, 2012, Pages

  Le, L C ^a   Zhao, D G ^a   Jiang, D S ^a   Li, L ^a   Wu, L L ^a   Chen, P ^a   Liu, Z S ^a   Li, Z C ^b   Fan, Y M ^b   Zhu, J J ^b   Wang, H ^b   Zhang, S M ^b   Yang, H ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPY; EMISSION EFFICIENCIES; INGAN/GAN; NON-RADIATIVE RECOMBINATIONS; REVERSE-BIAS; THREADING DISLOCATION; V-DEFECTS;

ATOMIC FORCE MICROSCOPY; DEFECTS; DIODES; GALLIUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 84871809601     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772548     Document Type: Article

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