Growth defects in GaN films on 6H-SiC substrates

Applied Physics Letters

Volumn 68, Issue 19, 1996, Pages 2678-2680

  Chien, F R ^a   Ning, X J ^a   Stemmer, S ^a   Pirouz, P ^a   Bremser, M D ^b   Davis, R F ^b  

^a Case Western Reserve University ^*  (United States)

^b Campus Box 7908   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000464763     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116279     Document Type: Article

References (11)

1. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B AIP 10, 1237 (1992).
2. H. Amano, N. Sawaki, I. Akasaki, and Y. Toyoda, Appl. Phys. Lett. AIP 48, 353 (1986).
3. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys. INS 28, L2112 (1989).
4. T. Sasaki and T. Matsuka, J. Appl. Phys. AIP 64, 4531 (1988).
5. Z. Lilienthal-Weber, H. Sohn, N. Newman, and J. Washburn, J. Vac. Sci. Technol. B AIP 13, 1578 (1995).
6. F. A. Ponce, B. S. Krusor, J. S. Major, Jr., W. E. Plano, and D. F. Welch, Appl. Phys. Lett. AIP 67, 410 (1995).
7. D. Smith, J. D. Chandrasekhar, B. Sverdlov, A. Botchkarev, A. Salvador, and H. Morkoç, Appl. Phys. Lett. AIP 67, 1830 (1995).
8. B. N. Sverdlov, G. A. Martin, H. Morkoç, and D. J. Smith, Appl. Phys. Lett. AIP 67, 2063 (1995).
9. T. W. Weeks, Jr., M. D. Bremser, K. S. Ailey, E. Carlson, W. G. Perry, and R. F. Davis, Appl. Phys. Lett. AIP 67, 401 (1995).
10. P. B. Hirsch, A. Howie, R. B. Nicholson, D. W. Pashley, and M. J. Whelan, Electron Microscopy of Thin Crystals (Butterworths, London, 1965).
11. X. J. Ning, F. R. Chien, P. Pirouz, J. Yang, and M. A. Khan, J. Mater. Res. 11, 580 (1996).