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Volumn 114, Issue 16, 2013, Pages

The characteristic of elongated Coulomb-blockade regions in a Si quantum-dot device coupled via asymmetric tunnel barriers

(4) Lee, Sejoon a Lee, Youngmin a Song, Emil B b Hiramoto, Toshiro c

a Dongguk University (South Korea)

b Engineering IV (United States)

c INSTITUTE OF INDUSTRIAL SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC TUNNELS; COULOMB-BLOCKADE OSCILLATIONS; ELECTRICAL CHARACTERISTIC; SOURCE AND DRAINS; SYSTEMATIC CONTROL; THIN TUNNEL BARRIERS; TRANSPORT CHARACTERISTICS; TRANSPORT MECHANISM;

SILICON;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84887285586 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4827177 Document Type: Article

Times cited : (14)

References (47)

1
- 81555220955
- 10.1038/nature10681
- J. J. L. Morton, D. R. McCamey, M. A. Eriksson, and S. A. Lyon, Nature 479, 345 (2011). 10.1038/nature10681
- (2011) Nature , vol.479 , pp. 345
- Morton, J.J.L.¹ McCamey, D.R.² Eriksson, M.A.³ Lyon, S.A.⁴

2
- 0043026701
- 10.1038/424484a
- J. Hogan, Nature 424, 484 (2003). 10.1038/424484a
- (2003) Nature , vol.424 , pp. 484
- Hogan, J.¹

3
- 13744260526
- 10.1063/1.1843271
- Y. Ono, A. Fujiwara, K. Nishiguchi, H. Inokawa, and Y. Takahashi, J. Appl. Phys. 97, 031101 (2005). 10.1063/1.1843271
- (2005) J. Appl. Phys. , vol.97 , pp. 031101
- Ono, Y.¹ Fujiwara, A.² Nishiguchi, K.³ Inokawa, H.⁴ Takahashi, Y.⁵

4
- 34147177506
- (Taylor Francis, New York).
- S. Oda and D. K. Ferry, Silicon Nanoelectronics (Taylor Francis, New York, 2006).
- (2006) Silicon Nanoelectronics
- Oda, S.¹ Ferry, D.K.²

5
- 0030214551
- 10.1109/16.506771
- Y. Takahashi, H. Namatsu, K. Kurihara, K. Iwadate, M. Nagase, and K. Murase, IEEE Trans. Electron Devices 43, 1213 (1996). 10.1109/16.506771
- (1996) IEEE Trans. Electron Devices , vol.43 , pp. 1213
- Takahashi, Y.¹ Namatsu, H.² Kurihara, K.³ Iwadate, K.⁴ Nagase, M.⁵ Murase, K.⁶

6
- 0000992381
- 10.1063/1.126256
- R. Augke, W. Eberhardt, C. Single, F. E. Prins, D. A. Wharam, and D. P. Kern, Appl. Phys. Lett. 76, 2065 (2000). 10.1063/1.126256
- (2000) Appl. Phys. Lett. , vol.76 , pp. 2065
- Augke, R.¹ Eberhardt, W.² Single, C.³ Prins, F.E.⁴ Wharam, D.A.⁵ Kern, D.P.⁶

7
- 33645664768
- 10.1063/1.2192637
- K. Miyaji, M. Saitoh, and T. Hiramoto, Appl. Phys. Lett. 88, 143505 (2006). 10.1063/1.2192637
- (2006) Appl. Phys. Lett. , vol.88 , pp. 143505
- Miyaji, K.¹ Saitoh, M.² Hiramoto, T.³

8
- 34547664815
- 10.1063/1.2767765
- K. Miyaji and T. Hiramoto, Appl. Phys. Lett. 91, 053509 (2007). 10.1063/1.2767765
- (2007) Appl. Phys. Lett. , vol.91 , pp. 053509
- Miyaji, K.¹ Hiramoto, T.²

9
- 54249106909
- 10.1143/JJAP.47.1813
- M. Kobayashi, K. Miyaji, and T. Hiramoto, Jpn. J. Appl. Phys., Part 1 47, 1813 (2008). 10.1143/JJAP.47.1813
- (2008) Jpn. J. Appl. Phys., Part 1 , vol.47 , pp. 1813
- Kobayashi, M.¹ Miyaji, K.² Hiramoto, T.³

10
- 40949149161
- 10.1063/1.2874247
- M. Kobayashi and T. Hiramoto, J. Appl. Phys. 103, 053709 (2008). 10.1063/1.2874247
- (2008) J. Appl. Phys. , vol.103 , pp. 053709
- Kobayashi, M.¹ Hiramoto, T.²

11
- 49149100076
- 10.1063/1.2958224
- S. Lee and T. Hiramoto, Appl. Phys. Lett. 93, 043508 (2008). 10.1063/1.2958224
- (2008) Appl. Phys. Lett. , vol.93 , pp. 043508
- Lee, S.¹ Hiramoto, T.²

12
- 39749089018
- 10.1063/1.2857501
- S. Lee, K. Miyaji, M. Kobayashi, and T. Hiramoto, Appl. Phys. Lett. 92, 073502 (2008). 10.1063/1.2857501
- (2008) Appl. Phys. Lett. , vol.92 , pp. 073502
- Lee, S.¹ Miyaji, K.² Kobayashi, M.³ Hiramoto, T.⁴

13
- 84874826861
- 10.1063/1.4793564
- S. Lee, Y. Lee, E. B. Song, K. L. Wang, and T. Hiramoto, Appl. Phys. Lett. 102, 083504 (2013). 10.1063/1.4793564
- (2013) Appl. Phys. Lett. , vol.102 , pp. 083504
- Lee, S.¹ Lee, Y.² Song, E.B.³ Wang, K.L.⁴ Hiramoto, T.⁵

14
- 77956582179
- 10.1063/1.3483618
- S. J. Shin, C. S. Jung, B. J. Park, T. K. Yoon, J. J. Lee, S. J. Kim, J. B. Choi, Y. Takahashi, and D. G. Hasko, Appl. Phys. Lett. 97, 103101 (2010). 10.1063/1.3483618
- (2010) Appl. Phys. Lett. , vol.97 , pp. 103101
- Shin, S.J.¹ Jung, C.S.² Park, B.J.³ Yoon, T.K.⁴ Lee, J.J.⁵ Kim, S.J.⁶ Choi, J.B.⁷ Takahashi, Y.⁸ Hasko, D.G.⁹

15
- 79954543984
- 10.1021/nl1044692
- S. J. Shin, J. J. Lee, H. J. Kang, J. B. Choi, S. R. E. Yang, Y. Takahashi, and D. G. Hasko, Nano Lett. 11, 1591 (2011). 10.1021/nl1044692
- (2011) Nano Lett. , vol.11 , pp. 1591
- Shin, S.J.¹ Lee, J.J.² Kang, H.J.³ Choi, J.B.⁴ Yang, S.R.E.⁵ Takahashi, Y.⁶ Hasko, D.G.⁷

16
- 33745790449
- 10.1063/1.2219128
- M. Mitic, M. C. Cassidy, K. D. Petersson, R. P. Starrett, E. Gauja, R. Brenner, R. G. Clark, A. S. Dzurak, C. Yang, and D. N. Jamieson, Appl. Phys. Lett. 89, 013503 (2006). 10.1063/1.2219128
- (2006) Appl. Phys. Lett. , vol.89 , pp. 013503
- Mitic, M.¹ Cassidy, M.C.² Petersson, K.D.³ Starrett, R.P.⁴ Gauja, E.⁵ Brenner, R.⁶ Clark, R.G.⁷ Dzurak, A.S.⁸ Yang, C.⁹ Jamieson, D.N.¹⁰

17
- 61649086923
- 10.1021/nl801992j
- M. Manoharan, Y. Tsuchiya, S. Oda, and H. Mizuta, Nano Lett. 8, 4648 (2008). 10.1021/nl801992j
- (2008) Nano Lett. , vol.8 , pp. 4648
- Manoharan, M.¹ Tsuchiya, Y.² Oda, S.³ Mizuta, H.⁴

18
- 41049106884
- 10.1063/1.2831664
- S. J. Angus, A. J. Ferguson, A. S. Dzurak, and R. G. Clark, Appl. Phys. Lett. 92, 112103 (2008). 10.1063/1.2831664
- (2008) Appl. Phys. Lett. , vol.92 , pp. 112103
- Angus, S.J.¹ Ferguson, A.J.² Dzurak, A.S.³ Clark, R.G.⁴

19
- 40549102448
- 10.1063/1.2888164
- C. K. Lee, S. J. Kim, S. J. Shin, J. B. Choi, and Y. Takahashi, Appl. Phys. Lett. 92, 093101 (2008). 10.1063/1.2888164
- (2008) Appl. Phys. Lett. , vol.92 , pp. 093101
- Lee, C.K.¹ Kim, S.J.² Shin, S.J.³ Choi, J.B.⁴ Takahashi, Y.⁵

20
- 67349283658
- 10.1109/TED.2009.2016399
- S.-J. Kim, C.-K. Lee, R.-S. Chung, E.-S. Park, S.-J. Shin, J.-B. Choi, Y.-S. Yu, N.-S. Kim, H. G. Lee, and K.-H. Park, IEEE Trans. Electron Devices 56, 1048 (2009). 10.1109/TED.2009.2016399
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 1048
- Kim, S.-J.¹ Lee, C.-K.² Chung, R.-S.³ Park, E.-S.⁴ Shin, S.-J.⁵ Choi, J.-B.⁶ Yu, Y.-S.⁷ Kim, N.-S.⁸ Lee, H.G.⁹ Park, K.-H.¹⁰

21
- 57349111767
- 10.1063/1.3028649
- S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara, Appl. Phys. Lett. 93, 222103 (2008). 10.1063/1.3028649
- (2008) Appl. Phys. Lett. , vol.93 , pp. 222103
- Miyamoto, S.¹ Nishiguchi, K.² Ono, Y.³ Itoh, K.M.⁴ Fujiwara, A.⁵

22
- 77956707977
- 10.1103/PhysRevB.82.033303
- S. Miyamoto, K. Nishiguchi, Y. Ono, K. M. Itoh, and A. Fujiwara, Phys. Rev. B 82, 033303 (2010). 10.1103/PhysRevB.82.033303
- (2010) Phys. Rev. B , vol.82 , pp. 033303
- Miyamoto, S.¹ Nishiguchi, K.² Ono, Y.³ Itoh, K.M.⁴ Fujiwara, A.⁵

23
- 79959443668
- 10.1063/1.3593491
- K. W. Chan, M. Mottonen, A. Kemppinen, N. S. Lai, K. Y. Tan, W. H. Lim, and A. S. Dzurak, Appl. Phys. Lett. 98, 212103 (2011). 10.1063/1.3593491
- (2011) Appl. Phys. Lett. , vol.98 , pp. 212103
- Chan, K.W.¹ Mottonen, M.² Kemppinen, A.³ Lai, N.S.⁴ Tan, K.Y.⁵ Lim, W.H.⁶ Dzurak, A.S.⁷

24
- 79958837466
- 10.1063/1.3595683
- G. Yamahata, K. Nishiguchi, and A. Fujiwara, Appl. Phys. Lett. 98, 222104 (2011). 10.1063/1.3595683
- (2011) Appl. Phys. Lett. , vol.98 , pp. 222104
- Yamahata, G.¹ Nishiguchi, K.² Fujiwara, A.³

25
- 65549113113
- 10.1088/0957-4484/20/17/175201
- K. Nishiguchi and A. Fujiwara, Nanotechnology 20, 175201 (2009). 10.1088/0957-4484/20/17/175201
- (2009) Nanotechnology , vol.20 , pp. 175201
- Nishiguchi, K.¹ Fujiwara, A.²

26
- 39349097305
- 10.1063/1.2870199
- K. Nishiguchi, Y. Ono, A. Fujiwara, H. Inokawa, and Y. Takahashi, Appl. Phys. Lett. 92, 062105 (2008). 10.1063/1.2870199
- (2008) Appl. Phys. Lett. , vol.92 , pp. 062105
- Nishiguchi, K.¹ Ono, Y.² Fujiwara, A.³ Inokawa, H.⁴ Takahashi, Y.⁵

27
- 40949083389
- 10.1103/PhysRevB.77.073310
- H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama, Phys. Rev. B 77, 073310 (2008). 10.1103/PhysRevB.77.073310
- (2008) Phys. Rev. B , vol.77 , pp. 073310
- Liu, H.W.¹ Fujisawa, T.² Ono, Y.³ Inokawa, H.⁴ Fujiwara, A.⁵ Takashina, K.⁶ Hirayama, Y.⁷

28
- 0000787592
- 10.1103/PhysRevB.43.1146
- M. Amman, R. Wilkins, E. Ben-Jacob, P. D. Maker, and R. C. Jaklevic, Phys. Rev. B 43, 1146 (1991). 10.1103/PhysRevB.43.1146
- (1991) Phys. Rev. B , vol.43 , pp. 1146
- Amman, M.¹ Wilkins, R.² Ben-Jacob, E.³ Maker, P.D.⁴ Jaklevic, R.C.⁵

29
- 0000394227
- 10.1103/PhysRevB.44.5919
- A. E. Hanna and M. Tinkham, Phys. Rev. B 44, 5919 (1991). 10.1103/PhysRevB.44.5919
- (1991) Phys. Rev. B , vol.44 , pp. 5919
- Hanna, A.E.¹ Tinkham, M.²

30
- 34249915494
- 10.1063/1.2745252
- R. Negishi, T. Hasegawa, K. Terabe, M. Aono, H. Tanaka, T. Ogawa, and H. Ozawa, Appl. Phys. Lett. 90, 223112 (2007). 10.1063/1.2745252
- (2007) Appl. Phys. Lett. , vol.90 , pp. 223112
- Negishi, R.¹ Hasegawa, T.² Terabe, K.³ Aono, M.⁴ Tanaka, H.⁵ Ogawa, T.⁶ Ozawa, H.⁷

31
- 33644680327
- 10.1103/PhysRevB.73.115305
- L. Jdira, P. Liljeroth, E. Stoffels, D. Vanmaekelbergh, and S. Speller, Phys. Rev. B 73, 115305 (2006). 10.1103/PhysRevB.73.115305
- (2006) Phys. Rev. B , vol.73 , pp. 115305
- Jdira, L.¹ Liljeroth, P.² Stoffels, E.³ Vanmaekelbergh, D.⁴ Speller, S.⁵

32
- 32644481591
- 10.1063/1.2163333
- B. Li, C. Zeng, J. Zhao, J. Yang, J. G. Hou, and Q. Zhu, J. Chem. Phys. 124, 064709 (2006). 10.1063/1.2163333
- (2006) J. Chem. Phys. , vol.124 , pp. 064709
- Li, B.¹ Zeng, C.² Zhao, J.³ Yang, J.⁴ Hou, J.G.⁵ Zhu, Q.⁶

33
- 35748979428
- 10.1088/0957-4484/18/47/475402
- G.-L. Chen, D. M. T. Kuo, W.-T. Lai, and P.-W. Li, Nanotechnology 18, 475402 (2007). 10.1088/0957-4484/18/47/475402
- (2007) Nanotechnology , vol.18 , pp. 475402
- Chen, G.-L.¹ Kuo, D.M.T.² Lai, W.-T.³ Li, P.-W.⁴

34
- 34548180277
- 10.1103/PhysRevLett.99.086803
- D. M. T. Kuo and Y.-C. Chang, Phys. Rev. Lett. 99, 086803 (2007). 10.1103/PhysRevLett.99.086803
- (2007) Phys. Rev. Lett. , vol.99 , pp. 086803
- Kuo, D.M.T.¹ Chang, Y.-C.²

35
- 77952334369
- 10.1088/0957-4484/21/22/225301
- T. Nishino, R. Negishi, M. Kawao, T. Nagata, H. Ozawa, and K. Ishibashi, Nanotechnology 21, 225301 (2010). 10.1088/0957-4484/21/22/225301
- (2010) Nanotechnology , vol.21 , pp. 225301
- Nishino, T.¹ Negishi, R.² Kawao, M.³ Nagata, T.⁴ Ozawa, H.⁵ Ishibashi, K.⁶

36
- 75749108206
- 10.1002/adma.200900864
- T. Li, W. Hu, and D. Zhu, Adv. Mater. 22, 286 (2010). 10.1002/adma.200900864
- (2010) Adv. Mater. , vol.22 , pp. 286
- Li, T.¹ Hu, W.² Zhu, D.³

37
- 25444466932
- 10.1002/ejic.200500270
- V. Jacobsen, T. Zhu, W. Knoll, and M. Kreiter, Eur. J. Inorg. Chem. 2005, 3683. 10.1002/ejic.200500270
- Eur. J. Inorg. Chem. , vol.2005 , pp. 3683
- Jacobsen, V.¹ Zhu, T.² Knoll, W.³ Kreiter, M.⁴

38
- 34247514384
- 10.1088/1742-6596/61/1/213
- S. Poonam and C. V. Dharmadhikari, J. Phys.: Conf. Ser. 61, 1076 (2007). 10.1088/1742-6596/61/1/213
- (2007) J. Phys.: Conf. Ser. , vol.61 , pp. 1076
- Poonam, S.¹ Dharmadhikari, C.V.²

39
- 21244493578
- 10.1143/JJAP.44.2618
- K.-W. Song, Y. K. Lee, J. S. Sim, K. R. Kim, J. D. Lee, B.-G. Park, Y. S. You, J.-O. Park, Y. S. Jin, and Y.-W. Kim, Jpn. J. Appl. Phys., Part 1 44, 2618 (2005). 10.1143/JJAP.44.2618
- (2005) Jpn. J. Appl. Phys., Part 1 , vol.44 , pp. 2618
- Song, K.-W.¹ Lee, Y.K.² Sim, J.S.³ Kim, K.R.⁴ Lee, J.D.⁵ Park, B.-G.⁶ You, Y.S.⁷ Park, J.-O.⁸ Jin, Y.S.⁹ Kim, Y.-W.¹⁰

40
- 0001370307
- 10.1063/1.125704
- N. Takahashi, H. Ishikuro, and T. Hiramoto, Appl. Phys. Lett. 76, 209 (2000). 10.1063/1.125704
- (2000) Appl. Phys. Lett. , vol.76 , pp. 209
- Takahashi, N.¹ Ishikuro, H.² Hiramoto, T.³

41
- 0345573838
- 10.1063/1.1322066
- N. Y. Morgan, D. Abusch-Magder, M. A. Kastner, Y. Takahashi, H. Tamura, and K. Murase, J. Appl. Phys. 89, 410 (2001). 10.1063/1.1322066
- (2001) J. Appl. Phys. , vol.89 , pp. 410
- Morgan, N.Y.¹ Abusch-Magder, D.² Kastner, M.A.³ Takahashi, Y.⁴ Tamura, H.⁵ Murase, K.⁶

42
- 0035423128
- M. Saitoh and T. Hiramoto, IEICE Trans. Electron. E84-C, 1071 (2001).
- (2001) IEICE Trans. Electron. , vol.E84-C , pp. 1071
- Saitoh, M.¹ Hiramoto, T.²

43
- 33646754273
- 10.1109/TNANO.2006.869949
- K. Miyaji, M. Saitoh, and T. Hiramoto, IEEE Trans. Nanotechnol. 5, 167 (2006). 10.1109/TNANO.2006.869949
- (2006) IEEE Trans. Nanotechnol. , vol.5 , pp. 167
- Miyaji, K.¹ Saitoh, M.² Hiramoto, T.³

44
- 0010114988
- 10.1007/BF00683484
- D. V. Averin and A. N. Korotkov, J. Low Temp. Phys. 80, 173 (1990). 10.1007/BF00683484
- (1990) J. Low Temp. Phys. , vol.80 , pp. 173
- Averin, D.V.¹ Korotkov, A.N.²

45
- 0033116184
- 10.1109/5.752518
- K. K. Likharev, Proc. IEEE 87, 606 (1999). 10.1109/5.752518
- (1999) Proc. IEEE , vol.87 , pp. 606
- Likharev, K.K.¹

46
- 0000162385
- 10.1103/PhysRevB.54.10339
- K. A. Matveev and L. I. Glazman, Phys. Rev. B 54, 10339 (1996). 10.1103/PhysRevB.54.10339
- (1996) Phys. Rev. B , vol.54 , pp. 10339
- Matveev, K.A.¹ Glazman, L.I.²

47
- 0032594662
- 10.1016/S0167-9317(99)00197-5
- H. Tamura, Y. Takahashi, and K. Murase, Microelectron. Eng. 47, 205 (1999). 10.1016/S0167-9317(99)00197-5
- (1999) Microelectron. Eng. , vol.47 , pp. 205
- Tamura, H.¹ Takahashi, Y.² Murase, K.³

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