Tunneling spectroscopy of a germanium quantum dot in single-hole transistors with self-aligned electrodes

Nanotechnology

Volumn 18, Issue 47, 2007, Pages

  Chen, Gwong Liang ^a   Kuo, David M T ^a   Lai, Wai Ting ^a   Li, Pei Wen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE; ELECTRODES; ELECTRON ENERGY LEVELS; FABRICATION; NANOWIRES; SEMICONDUCTING GERMANIUM; TRANSISTORS;

NEGATIVE DIFFERENTIAL CONDUCTANCE; SELF ALIGNED ELECTRODES; THERMAL OXIDATION; TUNNELING BARRIERS; TUNNELING SPECTROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

GERMANIUM; NANOWIRE; QUANTUM DOT; SILICON;

ARTICLE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRODE; OSCILLATION; OXIDATION; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPE; SEMICONDUCTOR; SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 35748979428     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/47/475402     Document Type: Article

References (16)

1. Kuo D M T and Chang Y C 2007 Phys. Rev. Lett. 99 086803
2. Jdira L, Liljeroth P, Stoffels E, Vanmaekelbergh D and Speller S 2006 Phys. Rev. B 73 115305
3. Zhuang L, Guo L and Chou S 1998 Silicon single-electron quantum-dot transistor switch operating at room temperature Appl. Phys. Lett. 72 1205-7
4. Li P W, Liao W M, Kuo D M T, Lin S W, Chen P S, Lu S C and Tsai M-J 2004 Appl. Phys. Lett. 85 1532
5. Ono Y, Takahashi Y, Tamazaki K, Nagase M, Namatsu H, Kurihara K and Murase K 2000 IEEE Trans. Electron Devices 47 147-53
6. Choi B H, Hwang S W, Kim I G, Shin H C, Kim Y and Kim E K 1998 Appl. Phys. Lett. 73 3129
7. Saitoh M and Hiramoto T 2004 Appl. Phys. Lett. 84 3172
8. Ishikuro H, Fujii T, Saraya T, Hashiguchi G, Hiramoto T and Ikoma T 1996 Appl. Phys. Lett. 68 3585
9. Liao W M, Li P W, Kuo M T and Lai W T 2006 Appl. Phys. Lett. 88 182109
10. Durrani Z, Kamiya T, Tan Y T, Ahmed H and Lloyd N 2002 Microelectron. Eng. 63 267
11. Hisamoto D, Lee W C, Kedzierski J, Takeuchi H, Asano K, Kuo C, Anderson E, King T J, Bokor J and Hu C M 2000 IEEE Trans. Electron Devices 47 2320-5
12. Lai W T and Li P W 2007 Nanotechnology 18 145402
13. Ono Y and Takahashi Y 2002 Japan. J. Appl. Phys. 41 2569
14. Li P W, Kuo D M T, Liao W M and Tsai M J 2004 Japan. J. Appl. Phys. 43 7788
15. Saitoh M, Murakami T and Hiramoto T 2003 IEEE Nanotechnol. 2 241
16. Saitoh M, Harata H and Hiramoto T 2005 Japan. J. Appl. Phys. 44 L338