Erratum: Room-temperature charge stability modulated by quantum effects in a nanoscale silicon Island [Nano Letters (2011) 11 (1591-1597) DOI:10.1021/nl1044692);Room-temperature charge stability modulated by quantum effects in a nanoscale silicon island

Nano Letters

Volumn 11, Issue 4, 2011, Pages 1591-1597

  Shin, S J ^a   Lee, J J ^a   Kang, H J ^a   Choi, J B ^a   Yang, S R Eric ^b   Takahashi, Y ^c   Hasko, D G ^d  

^a Chungbuk National University   (South Korea)

^b Korea University   (South Korea)

^c HOKKAIDO UNIVERSITY   (Japan)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Coulomb blockade; nanoscale silicon dot; quantum effects; room temperature charge stability; Single electron transport

Indexed keywords

COULOMB BLOCKADE; ELECTRON TRANSPORT PROPERTIES; EXCITED STATES; NANOTECHNOLOGY; QUANTUM ELECTRONICS; SILICON; STABILITY; TEMPERATURE;

CHARGE STABILITY; COULOMB DIAMONDS; LOW TEMPERATURES; NANO SCALE; QUANTUM EFFECTS; SINGLE-ELECTRON TRANSPORT; TRANSPORT MEASUREMENTS; VALLEY SPLITTING;

QUANTUM CHEMISTRY;

NANOMATERIAL; SILICON;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; PARTICLE SIZE; QUANTUM THEORY; STATIC ELECTRICITY; TEMPERATURE; ULTRASTRUCTURE;

COMPUTER SIMULATION; MODELS, CHEMICAL; NANOSTRUCTURES; PARTICLE SIZE; QUANTUM THEORY; SILICON; STATIC ELECTRICITY; TEMPERATURE;

EID: 79954543984     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2015069     Document Type: Erratum

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