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Applied Physics Letters

Volumn 97, Issue 10, 2010, Pages

Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature

(9) Shin, S J a Jung, C S a Park, B J a Yoon, T K a Lee, J J a Kim, S J a Choi, J B a Takahashi, Y b Hasko, D G c

a Chungbuk National University (South Korea)

b HOKKAIDO UNIVERSITY (Japan)

c UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE STABILITY; CHARGING ENERGIES; COULOMB DIAMONDS; FIN FIELD-EFFECT TRANSISTORS; LITERAL GATES; PEAK TO VALLEY CURRENT RATIO; RELIABLE FORMATIONS; ROOM TEMPERATURE; SI-BASED; ULTRA-SMALL; VOLTAGE SWINGS;

CAPACITANCE MEASUREMENT; FIELD EFFECT TRANSISTORS;

SINGLE ELECTRON TRANSISTORS;

EID: 77956582179 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3483618 Document Type: Article

Times cited : (107)

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- 2 dielectric is thus estimated to be ∼35 nm, which was obtained by the 15-nm thick thermal oxidation first and subsequently by 20-nm-thick TEOS deposition.
- 2 dielectric is thus estimated to be ∼35 nm, which was obtained by the 15-nm thick thermal oxidation first and subsequently by 20-nm-thick TEOS deposition.

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